绝缘栅双极晶体管datasheet-PDF中文资料大全

 

FGPF4633 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: FGPF4633

沟道类型: N-Channel

最大耗散功率 (Pc):

集电极--发射极击穿电压 (Uce): 330V

集电极--发射极饱和压降 (Ucesat): 1.55V

集电极 -栅极电压 (Ucg):

栅极-发射极最大电压 (Ueg):

在25 C的连续集电极电流 (Ic): 70.0A

最大工作温度 (Tj), °C:

导通上升时间: 0

输出电容 (Cc), pF:

封装形式: TO220F

FGPF4633 : 代换, 替换

FGPF4633 PDF doc:

1.1. fgpf4633.pdf Size:419K _fairchild_semi

FGPF4633
FGPF4633

August 2010 FGPF4633 330V PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. High input impedance Fast switching RoHS compliant

5.1. fgpf4536.pdf Size:713K _fairchild_semi

FGPF4633
FGPF4633

August 2010 FGPF4536 360V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are High input impedance essential. Fast switching RoHS compliant A

5.2. fgpf4533.pdf Size:313K _fairchild_semi

FGPF4633
FGPF4633

August 2010 FGPF4533 330V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. High input impedance Fast switching RoHS compliant

其他IGBT晶体管 : FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , IRG4PC50UD , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CLT4 , NGB18N40CLB , NGB8202A .

 


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目录

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