CT60AM-18F 参数及代换

 

CT60AM-18F 三极管参数

制造商零件编号: CT60AM-18F

沟道类型: N-Channel

最大耗散功率 (Pc): 180W

集电极--发射极击穿电压 (Vce): 900V

集电极--发射极饱和压降 (Vcesat): 2.1V

栅极-发射极最大电压 (Veg): 30V

在25 C的连续集电极电流 (Ic): 60A

最大工作温度 (Tj), °C: 150

导通上升时间: 50

输出电容 (Cc), pF: 4400pF

封装形式: TO3PL

CT60AM-18F 参数及代换

 

CT60AM-18F PDF doc:

1.1. ct60am-18f.pdf Size:23K _mitsubishi

CT60AM-18F
CT60AM-18F

MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER In

其他IGBT晶体管 : CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , IKW50N60T , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 .

 


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