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IXGR40N60C2D1 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: IXGR40N60C2D1

沟道类型: N-Channel

最大耗散功率 (Pc):

集电极--发射极击穿电压 (Uce): 600V

集电极--发射极饱和压降 (Ucesat): 2.7V

集电极 -栅极电压 (Ucg):

栅极-发射极最大电压 (Ueg):

在25 C的连续集电极电流 (Ic): 56A

最大工作温度 (Tj), °C:

导通上升时间: 32

输出电容 (Cc), pF:

封装形式: ISOPLUS247

IXGR40N60C2D1 : 代换, 替换

IXGR40N60C2D1 PDF doc:

1.1. ixgr40n60b2.pdf Size:607K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B2 HiPerFASTTM IGBT IXGR 40N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 1.9 V C2-Class High Speed IGBTs tfi typ = 82 ns (Electrically Isolated Back Surface) Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25C to 150C 600 V VCGR T

1.2. ixgr40n60c.pdf Size:512K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25

1.3. ixgr40n60c2.pdf Size:177K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C ISOLATED TAB E VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Conti

1.4. ixgr40n60cd1.pdf Size:510K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

1.5. ixgr40n60b2d1.pdf Size:499K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B2 HiPerFASTTM IGBT IXGR 40N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 1.9 V C2-Class High Speed IGBTs tfi typ = 82 ns (Electrically Isolated Back Surface) Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 600 V V

1.6. ixgr40n60bd1.pdf Size:53K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B HiPerFASTTM IGBT IC25 = 70 A IXGR 40N60BD1 ISOPLUS247TM VCE(sat) = 2.1 V (Electrically Isolated Backside) tfi(typ) = 180 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 VCES TJ = 25°C to 150°C 600 V E153432 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C 70 A C E Isolated Backsi

1.7. ixgr40n60b2.pdf Size:499K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B2 HiPerFASTTM IGBT IXGR 40N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 1.9 V C2-Class High Speed IGBTs tfi typ = 82 ns (Electrically Isolated Back Surface) Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 600 V V

1.8. ixgr40n60b.pdf Size:53K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B HiPerFASTTM IGBT IC25 = 70 A IXGR 40N60BD1 ISOPLUS247TM VCE(sat) = 2.1 V (Electrically Isolated Backside) tfi(typ) = 180 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 VCES TJ = 25°C to 150°C 600 V E153432 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C 70 A C E Isolated Backsi

1.9. ixgr40n60c.pdf Size:510K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

1.10. ixgr40n60c2d1.pdf Size:173K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C ISOLATED TAB E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VG

1.11. ixgr40n60c2.pdf Size:173K _igbt_a

IXGR40N60C2D1
IXGR40N60C2D1

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C ISOLATED TAB E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VG

其他IGBT晶体管 : IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IRGB4062D , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 .

 


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