绝缘栅双极晶体管datasheet-PDF中文资料大全

 

G20N60B3D 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: G20N60B3D

沟道类型: N-Channel

最大耗散功率 (Pc): 165W

集电极--发射极击穿电压 (Uce): 600V

集电极--发射极饱和压降 (Ucesat): 2V

集电极 -栅极电压 (Ucg):

栅极-发射极最大电压 (Ueg): 20V

在25 C的连续集电极电流 (Ic): 40A

最大工作温度 (Tj), °C: 150

导通上升时间: 25

输出电容 (Cc), pF:

封装形式: TO247

G20N60B3D : 代换, 替换

G20N60B3D PDF doc:

1.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has the high

2.1. hgtg20n60b3.pdf Size:236K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oC voltage switching devices combining the best features of 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input

4.1. hgtg20n60a4d.pdf Size:148K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance of a MOS

4.2. hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3.pdf Size:140K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . . . . 108n

4.3. hgtg20n60a4_hgtp20n60a4.pdf Size:136K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20A high voltage switching devices combining the best features 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capability high input impedance of a MOSFET a

其他IGBT晶体管 : G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .

 


G20N60B3D
  G20N60B3D
  G20N60B3D
  G20N60B3D
 
G20N60B3D
  G20N60B3D
  G20N60B3D
  G20N60B3D
 

social 

目录

推荐产品

绝缘栅双极晶体管IGBT BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

长度至少2个字符,最大长度为20!