绝缘栅双极晶体管datasheet-PDF中文资料大全

 

G20N60B3D 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: G20N60B3D

沟道类型: N-Channel

最大耗散功率 (Pc): 165W

集电极--发射极击穿电压 (Vce): 600V

集电极--发射极饱和压降 (Vcesat): 2V

栅极-发射极最大电压 (Veg): 20V

在25 C的连续集电极电流 (Ic): 40A

最大工作温度 (Tj), °C: 150

导通上升时间: 25

输出电容 (Cc), pF:

封装形式: TO247

G20N60B3D : 代换, 替换

G20N60B3D PDF doc:

1.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has the high

2.1. hgtg20n60b3.pdf Size:236K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oC voltage switching devices combining the best features of 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input

2.2. hgtg20n60b3.pdf Size:194K _igbt_a

G20N60B3D
G20N60B3D

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC h

其他IGBT晶体管 : G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .

 


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