绝缘栅双极晶体管datasheet-PDF中文资料大全

 

RJP30H1DPD 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: RJP30H1DPD

沟道类型: N-Channel

最大耗散功率 (Pc):

集电极--发射极击穿电压 (Uce): 360V

集电极--发射极饱和压降 (Ucesat): 1.5V

集电极 -栅极电压 (Ucg):

栅极-发射极最大电压 (Ueg):

在25 C的连续集电极电流 (Ic): 30A

最大工作温度 (Tj), °C:

导通上升时间: 150

输出电容 (Cc), pF:

封装形式: TO252

RJP30H1DPD : 代换, 替换

RJP30H1DPD PDF doc:

1.1. r07ds0466ej_rjp30h1dpp.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr =80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ? Low leak current: ICES = 1 ?A max. ? Isolated package TO-220FL

1.2. r07ds0465ej_rjp30h1dpd.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr = 80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. ? Low leak current: ICES = 1 ?A max. Outline RENESAS Package co

1.3. rjp30h1dpp-m0.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

1.4. rjp30h1dpd.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

其他IGBT晶体管 : RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , SGW30N60HS , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM .

 


RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
 
RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
  RJP30H1DPD
 

social 

目录

推荐产品

绝缘栅双极晶体管IGBT IRGP4263 | AP50G60SW | NGTB60N60SWG | NGTB60N60S | NGTG15N120FL2WG | NGTG15N120FL2 | NGTB15N120FL2WG | NGTB15N120FL2 | RJH1CV6DPK | MM60G60B |

长度至少2个字符,最大长度为20!