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SSIG20N135H 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: SSIG20N135H

沟道类型: N-Channel

最大耗散功率 (Pc): 310

集电极--发射极击穿电压 (Vce): 1350

集电极--发射极饱和压降 (Vcesat): 1.9

栅极-发射极最大电压 (Veg): 30

在25 C的连续集电极电流 (Ic): 40

最大工作温度 (Tj), °C: 175

导通上升时间:

输出电容 (Cc), pF: 70

封装形式: TO247

SSIG20N135H : 代换, 替换

SSIG20N135H PDF doc:

1.1. ssig20n135h.pdf Size:614K _silikron

SSIG20N135H
SSIG20N135H

 SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100° C Schema t ic d iagr am TO-247 Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Co

其他IGBT晶体管 : FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , G40N60B3 , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM .

 


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