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BT25T120ANF 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: BT25T120ANF

沟道类型: N-Channel

最大耗散功率 (Pc): 312

集电极--发射极击穿电压 (Vce): 1200

集电极--发射极饱和压降 (Vcesat): 2.5

栅极-发射极最大电压 (Veg): 20

在25 C的连续集电极电流 (Ic): 50

最大工作温度 (Tj), °C: 150

导通上升时间: 21

输出电容 (Cc), pF: 82

封装形式: TO3PN

BT25T120ANF : 代换, 替换

BT25T120ANF PDF doc:

1.1. bt25t120anf.pdf Size:170K _igbt_a

BT25T120ANF
BT25T120ANF

Silicon FS Planar IGBT R ○ BT25T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features: Trench FS Technology, Positive temperature coef

1.2. bt25t120anf.pdf Size:172K _crhj

BT25T120ANF
BT25T120ANF

Silicon FS Planar IGBT R ○ BT25T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features: Trench FS Technology, Positive temperature coef

其他IGBT晶体管 : FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , IRG7IC28U , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM .

 


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