绝缘栅双极晶体管datasheet-PDF中文资料大全

 

BT15T120ANF 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: BT15T120ANF

沟道类型: N-Channel

最大耗散功率 (Pc): 186

集电极--发射极击穿电压 (Vce): 1200

集电极--发射极饱和压降 (Vcesat): 2.5

栅极-发射极最大电压 (Veg): 20

在25 C的连续集电极电流 (Ic): 30

最大工作温度 (Tj), °C: 150

导通上升时间: 16

输出电容 (Cc), pF: 52

封装形式: TO3PN

BT15T120ANF : 代换, 替换

BT15T120ANF PDF doc:

1.1. bt15t120anf.pdf Size:557K _igbt_a

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

1.2. bt15t120anf.pdf Size:557K _crhj

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

其他IGBT晶体管 : 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , G20N60B3D , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM .

 


BT15T120ANF
  BT15T120ANF
  BT15T120ANF
  BT15T120ANF
 
BT15T120ANF
  BT15T120ANF
  BT15T120ANF
  BT15T120ANF
 

social 

目录

推荐产品

绝缘栅双极晶体管IGBT DM2G400SH6N | DM2G400SH6A | DM2G300SH6NE | DM2G300SH6A | DM2G300SH12A | DM2G200SH6N | DM2G200SH6A | DM2G200SH12AE | DM2G200SH12A | DM2G150SH6NE |

长度至少2个字符,最大长度为20!