绝缘栅双极晶体管datasheet-PDF中文资料大全

 

BT50N60ANF 参数- 绝缘栅双极晶体管- IGBT- 目录- 参数- 数据表- PDF

制造商零件编号: BT50N60ANF

沟道类型: N-Channel

最大耗散功率 (Pc): 312

集电极--发射极击穿电压 (Vce): 600

集电极--发射极饱和压降 (Vcesat): 2.5

栅极-发射极最大电压 (Veg): 20

在25 C的连续集电极电流 (Ic): 50

最大工作温度 (Tj), °C: 150

导通上升时间: 49

输出电容 (Cc), pF: 175

封装形式: TO3PN

BT50N60ANF : 代换, 替换

BT50N60ANF PDF doc:

1.1. bt50n60anf.pdf Size:105K _igbt_a

BT50N60ANF
BT50N60ANF

Silicon FS Planar IGBT R ○ BT50N60ANF General Description: VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features: FS Trench Technology, Positive temperature c

1.2. bt50n60anf.pdf Size:106K _crhj

BT50N60ANF
BT50N60ANF

Silicon FS Planar IGBT R ○ BT50N60ANF General Description: VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features: FS Trench Technology, Positive temperature c

其他IGBT晶体管 : BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , IKW50N60H3 , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P .

 


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绝缘栅双极晶体管IGBT DM2G400SH6N | DM2G400SH6A | DM2G300SH6NE | DM2G300SH6A | DM2G300SH12A | DM2G200SH6N | DM2G200SH6A | DM2G200SH12AE | DM2G200SH12A | DM2G150SH6NE |

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