STL150N3LLH5 MOSFET晶体管. 目录. 参数. 数据表 (PDF)

制造商零件编号: STL150N3LLH5

种类: MOSFET

沟道类型: N

最大耗散功率 (Pd): 4

漏源电压 (Uds): 30V

栅源电压 (Ugs):

最大漏极电流 (Id): 35

最大工作温度 (Tj), °C:

导通上升时间 (tr):

输出电容 (Cd), pF:

静态的漏源极导通电阻 (Rds), Ohm: 0.00175

封装形式: PowerFLAT_5x6

STL150N3LLH5 : 代换, 替换

STL150N3LLH5 数据表 (PDF)

1.1. stl150n3llh6.pdf Size:829K _st

ons Min. Typ. Max. Unit Input capacitance Ciss 4040 pF Output capacitance VDS = 25 V, f=1 MHz, Coss - 740 - pF VGS=0 Reverse transfer Crss 425 pF capacitance Qg Total gate charge VDD=15 V, ID = 33 A 40 nC Qgs Gate-source charge VGS =4.5 V - 16.3 - nC Qgd Gate-drain charge (see Figure 14) 15.8 nC f=1 MHz Gate DC Bias = 0 RG Gate input resistance Test signal level = 20 mV - 1.4 - ? open drain 4/12 Doc ID 15345 Rev 2 STL150N3LLH6 Electrical characteristics Table 7. Switching tim

1.2. stl150n3llh5.pdf Size:522K _st

it Ciss Input capacitance 5800 pF VDS = 25 V, f=1 MHz, Coss Output capacitance - 1147 - pF VGS=0 Crss Reverse transfer 127 pF capacitance Qg Total gate charge VDD=15 V, ID = 35 A 40 nC Qgs Gate-source charge VGS =4.5 V - 13.4 - nC Gate-drain charge 14.9 nC Qgd (see Figure 14) f=1 MHz Gate DC Bias = 0 RG Gate input resistance Test signal level = 20 mV - 1.1 - ? open drain Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay

5.1. stl15n3llh5.pdf Size:849K _st

put capacitance 295 pF VGS=0 Crss Reverse transfer 39 pF capacitance Qg Total gate charge VDD=15 V, ID = 15 A 12 nC Qgs Gate-source charge VGS =4.5 V 4 nC Gate-drain charge 4.7 nC Qgd (see Figure 14) f=1 MHz Gate DC Bias = 0 RG Gate input resistance Test signal level = 20 mV 0.5 1.5 2.5 ? Open drain 4/12 Obsolete Product(s) - Obsolete Product(s) STL15N3LLH5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) T

5.2. stl15dn4f5.pdf Size:775K _st

. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance 1550 pF VDS = 25 V, f = 1 MHz Coss Output capacitance - 230 - pF VGS = 0 Crss Reverse transfer 25 pF capacitance Qg Total gate charge VDD= 20 V, ID = 15 A 25 nC Qgs Gate-source charge VGS = 10 V - 6 - nC Gate-drain charge 5.5 nC Qgd (see Figure 14) 4/12 Doc ID 17739 Rev 1 STL15DN4F5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit

5.3. 2stl1525.pdf Size:130K _st

6 2STL1525 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (�ST�) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST�s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST produ

其他MOSET晶体管: STI8N65M5 , STL100N1VH5 , STL100N6LF6 , STL10N3LLH5 , STL11N3LLH6 , STL12N65M5 , STL13NM60N , STL140N4LLF5 , BF982 , STL150N3LLH6 , STL15DN4F5 , STL15N3LLH5 , STL160N3LLH6 , STL16N1VH5 , STL16N65M5 , STL17N3LLH6 , STL18N55M5 .