BUZ11 参数及代换

 

BUZ11 场效应管参数

制造商产品编号: BUZ11

系列: MOSFET

沟道: N

耗散功率 (Pd): 120

漏源反向电压 (Vds): 50

栅源反向电压 (Vgs): 20

漏极电流(连续) (Id): 36

最高结温 (Tj), °C: 150

上升时间 (tr):

输出电容 (Cd), pF: 1500

通态电阻 (Rds), Ohm: 0.04

封装形式: TO220

BUZ11 参数及代换

 

BUZ11 说明书

1.1. buz11a.pdf Size:116K _st

BUZ11
BUZ11

BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11A 50 V < 0.055 ? 27 A TYPICAL RDS(on) = 0.048 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 1 175oC OPERATING TEMPERATURE APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVE

1.2. buz11.pdf Size:173K _st

BUZ11
BUZ11

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11 50 V < 0.04 ? 36 A BUZ11FI 50 V < 0.04 ? 21 A TYPICAL RDS(on) = 0.03 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH CURRE

1.3. buz11s2_buz11s2fi.pdf Size:384K _st2

BUZ11
BUZ11

1.4. buz11.pdf Size:81K _fairchild_semi

BUZ11
BUZ11

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040? (BUZ1 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Switching Speed

1.5. buz110sl.pdf Size:104K _infineon

BUZ11
BUZ11

BUZ 110SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q67040-S4004-A2 Tube

1.6. buz111sl.pdf Size:101K _infineon

BUZ11
BUZ11

BUZ 111SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube

1.7. buz111s.pdf Size:103K _infineon

BUZ11
BUZ11

BUZ 111S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A

1.8. buz110s.pdf Size:126K _infineon

BUZ11
BUZ11

BUZ 110S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tube BUZ110S E3045A

其他MOSFET晶体管: BUP66 , BUP67 , BUP68 , BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , IRF630 , BUZ11A , BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 .

 


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