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IRF3205 参数-MOSFET-场效应晶体管datasheet-PDF

制造商产品编号: IRF3205

系列: MOSFET

沟道: N

耗散功率 (Pd): 150

漏源反向电压 (Uds): 55

栅源反向电压 (Ugs): 10

漏极电流(连续) (Id): 98

最高结温 (Tj), °C: 150

上升时间 (tr):

输出电容 (Cd), pF:

通态电阻 (Rds), Ohm: 0.008

封装形式: TO220AB

IRF3205 : 代换, 替换

IRF3205 PDF doc:

1.1. irf3205s.pdf Size:160K _international_rectifier

IRF3205
IRF3205

PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance

1.2. irf3205_.pdf Size:97K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.3. irf3205.pdf Size:92K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.4. irf3205z.pdf Size:181K _international_rectifier

IRF3205
IRF3205

PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.5. irf3205.pdf Size:450K _first_silicon

IRF3205
IRF3205

SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Parameter Symbol Rating Unit 1.Gate

其他MOSFET晶体管: IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRFP250N , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 .

 


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