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IRF4905 参数-MOSFET-场效应晶体管datasheet-PDF

制造商产品编号: IRF4905

系列: MOSFET

沟道: P

耗散功率 (Pd): 150

漏源反向电压 (Vds): 55

栅源反向电压 (Vgs): 10

漏极电流(连续) (Id): 64

最高结温 (Tj), °C: 150

上升时间 (tr):

输出电容 (Cd), pF:

通态电阻 (Rds), Ohm: 0.02

封装形式: TO220AB

IRF4905 : 代换, 替换

IRF4905 PDF doc:

1.1. irf4905.pdf Size:108K _international_rectifier

IRF4905
IRF4905

PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

1.2. irf4905s.pdf Size:163K _international_rectifier

IRF4905
IRF4905

PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF4905S) VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

其他MOSFET晶体管: IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , 2N5485 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

 


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