场效应晶体管datasheet-PDF中文资料大全

 

RFL2N06 参数-MOSFET-场效应晶体管datasheet-PDF

制造商产品编号: RFL2N06

系列: MOSFET

沟道: N

耗散功率 (Pd): 8.33

漏源反向电压 (Uds): 60

栅源反向电压 (Ugs): 20

漏极电流(连续) (Id): 2

最高结温 (Tj), °C: 150

上升时间 (tr): 14

输出电容 (Cd), pF: 85

通态电阻 (Rds), Ohm: 0.95

封装形式: TO205AF

RFL2N06 : 代换, 替换

RFL2N06 PDF doc:

1.1. rfl2n05l_rfl2n06l_rfp4n05l_rfp4n06l.pdf Size:255K _njs

RFL2N06
RFL2N06



4.1. rfl2n05_rlf2n06.pdf Size:89K _njs

RFL2N06
RFL2N06



其他MOSFET晶体管: RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , IRF3710 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J .

 


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目录

推荐产品

场效应管MOSFET 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H | RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 |

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