MMBF170 MOSFET晶体管. 目录. 参数. 数据表 (PDF)

制造商零件编号: MMBF170

种类: MOSFET

沟道类型: N

最大耗散功率 (Pd): 0.3

漏源电压 (Uds): 60V

栅源电压 (Ugs):

最大漏极电流 (Id): 0.5

最大工作温度 (Tj), °C: 150

导通上升时间 (tr):

输出电容 (Cd), pF:

静态的漏源极导通电阻 (Rds), Ohm: 5

封装形式: SOT23

MMBF170 : 代换, 替换

MMBF170 数据表 (PDF)

1.1. mmbf170lt1rev2d.pdf Size:98K _motorola

to insure proper solder connection subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 inches 0.8 mm SOT�23 SOT�23 POWER DISSIPATION The power dissipation of the SOT�23 is a function of the SOLDERING PRECAUTIONS pad size. This can vary from the minimum pad size for The melting temperature of solder is higher than the rated soldering to a pad size given for maximum power dissipation. temperature of the device. When the entire device is heated

1.2. mmbf170lt1.pdf Size:102K _motorola

to insure proper solder connection subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 inches 0.8 mm SOT�23 SOT�23 POWER DISSIPATION The power dissipation of the SOT�23 is a function of the SOLDERING PRECAUTIONS pad size. This can vary from the minimum pad size for The melting temperature of solder is higher than the rated soldering to a pad size given for maximum power dissipation. temperature of the device. When the entire device is heated

1.3. bs170_mmbf170.pdf Size:1298K _fairchild_semi

Electrical Characteristics (continued) � 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BS170 / MMBF170 Rev. E2 4 BS170 / MMBF170 � N-Channel Enhancement Mode Field Effect Transistor Typical Electrical Characteristics (continued) � 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BS170 / MMBF170 Rev. E2 5 BS170 / MMBF170 � N-Channel Enhancement Mode Field Effect Transistor � 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BS170 / MMBF170

1.4. mmbf170.pdf Size:126K _diodes

. Junction Temperature Fig. 4 On-Resistance vs. Gate-Source Voltage 400 350 300 250 200 150 100 50 0 0 25 50 100 125 150 175 200 75 TA, AMBIENT TEMPERATURE (�C) Fig. 5 Max Power Dissipation vs. Ambient Temperature 2 of 3 June 2008 MMBF170 � Diodes Incorporated www.diodes.com Document number: DS30104 Rev. 10 - 2 DS(ON) R , NORMALIZED D I , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE DS(ON) DS(ON) R , NORMALIZED R , NORMALIZED DRAIN-SOURCE ON-RESISTAN

1.5. mmbf170lt1-d.pdf Size:77K _onsemi

tics 8 30 15 QT TJ = 25�C 7 25 12.5 6 20 10 5 VGS VDS 4 15 7.5 3 Qgs Qgd 10 5 VGS = 4.5 V 2 ID = 0.5 A 5 2.5 1 TJ = 25�C VGS = 10 V 0 0 0 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0 0.5 1 1.5 2 ID, DRAIN CURRENT (A) Qg, TOTAL GATE CHARGE (nC) Figure 5. On-Resistance vs. Drain Current and Figure 6. Gate-to-Source and Gate Voltage Drain-to-Source Voltage vs. Total Charge 0.24 VGS = 0 V 0.22 TJ = 25�C 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0

其他MOSET晶体管: LS3955 , LS3956 , LS3958 , MEM554 , MEM554C , MEM564C , MEM610 , MEM614 , IRFP240 , MNT-LB32N16 , MNT-LB32N16-C4 , MNT-LB32N20 , MNT-LB32N20-C4 , MTB30N06VL , MTB30P06V , MTB35N06ZL , MTP10N10M .