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RFP50N06 参数-MOSFET-场效应晶体管datasheet-PDF

制造商产品编号: RFP50N06

系列: MOSFET

沟道: N

耗散功率 (Pd): 131

漏源反向电压 (Uds): 60

栅源反向电压 (Ugs):

漏极电流(连续) (Id): 50

最高结温 (Tj), °C: 150

上升时间 (tr):

输出电容 (Cd), pF:

通态电阻 (Rds), Ohm: 0.022

封装形式: TO220AB

RFP50N06 : 代换, 替换

RFP50N06 PDF doc:

1.1. rfg50n06_rfp50n06_rf1s50n06sm.pdf Size:373K _fairchild_semi

RFP50N06
RFP50N06

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.022Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

1.2. rfg50n06le_rfp50n06le_rf1s50n06lesm.pdf Size:154K _intersil

RFP50N06
RFP50N06

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs • 50A, 60V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.022Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approa

1.3. rfp50n06.pdf Size:74K _intersil

RFP50N06
RFP50N06

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022? the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

其他MOSFET晶体管: RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , SPA11N60C3 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E .

 


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