FDP3682 MOSFET晶体管. 目录. 参数. 数据表 (PDF)

制造商零件编号: FDP3682

种类: MOSFET

沟道类型: N

最大耗散功率 (Pd):

漏源电压 (Uds): 100V

栅源电压 (Ugs):

最大漏极电流 (Id): 32.0

最大工作温度 (Tj), °C:

导通上升时间 (tr):

输出电容 (Cd), pF:

静态的漏源极导通电阻 (Rds), Ohm: 0.036

封装形式: TO220

FDP3682 : 代换, 替换

FDP3682 数据表 (PDF)

1.1. fdb3682_fdp3682.pdf Size:278K _fairchild_semi

ime - 32 - ns tOFF Turn-Off Time - - 87 ns Drain-Source Diode Characteristics ISD = 32A - - 1.25 V VSD Source to Drain Diode Voltage ISD = 16A - - 1.0 V trr Reverse Recovery Time ISD = 32A, dISD/dt = 100A/�s - - 55 ns QRR Reverse Recovery Charge ISD = 32A, dISD/dt = 100A/�s - - 90 nC Notes: 1: Starting TJ = 25�C, L = 0.27mH, IAS = 20A. 2: Pulse Width = 100s �2002 Fairchild Semiconductor Corporation FDB3682 / FDP3682 Rev. B FDB3682 / FDP3682 Typical Characteristics TC = 25�C unle

5.1. fdb3652_fdp3652_fdi3652.pdf Size:263K _fairchild_semi

N) Turn-On Delay Time - 12 - ns tr Rise Time - 85 - ns VDD = 50V, ID = 61A VGS = 10V, RGS = 6.8? td(OFF) Turn-Off Delay Time - 26 - ns tf Fall Time - 45 - ns tOFF Turn-Off Time - - 107 ns Drain-Source Diode Characteristics ISD = 61A - - 1.25 V VSD Source to Drain Diode Voltage ISD = 30A - - 1.0 V trr Reverse Recovery Time ISD = 61A, dISD/dt = 100A/�s - - 62 ns QRR Reverse Recovered Charge ISD = 61A, dISD/dt = 100A/�s - - 45 nC Notes: 1: Starting TJ = 25�C, L = 0.228mH, IAS = 40A.

5.2. fdb3632_fdp3632_fdi3632_fdh3632.pdf Size:656K _fairchild_semi

20 - nC Resistive Switching Characteristics (VGS = 10V) tON Turn-On Time - - 102 ns td(ON) Turn-On Delay Time - 30 - ns tr Rise Time - 39 - ns VDD = 50V, ID = 80A VGS = 10V, RGS = 3.6? td(OFF) Turn-Off Delay Time - 96 - ns tf Fall Time - 46 - ns tOFF Turn-Off Time - - 213 ns Drain-Source Diode Characteristics ISD = 80A - - 1.25 V VSD Source to Drain Diode Voltage ISD = 40A - - 1.0 V trr Reverse Recovery Time ISD = 75A, dISD/dt= 100A/�s - - 64 ns QRR Reverse Recovered Charge ISD

5.3. fdp3672.pdf Size:237K _fairchild_semi

rse Recovery Time ISD = 41A, dISD/dt =100A/�s - - 39 ns QRR Reverse Recovered Charge ISD = 41A, dISD/dt =100A/�s - - 42 nC Notes: 1: Starting TJ = 25�C, L = 0.11mH, IAS = 30A. 2: Pulse Width = 100s �2003 Fairchild Semiconductor Corporation FDP3672 Rev. A3 FDP3672 Typical Characteristics TC = 25�C unless otherwise noted 1.2 50 VGS = 10V 1.0 40 0.8 30 0.6 20 0.4 0.2 10 0 0 0 25 50 75 100 150 175 125 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE

5.4. fdp3651u.pdf Size:644K _fairchild_semi

0 ID = 80A ID = 80A PULSE DURATION = 80�s VGS = 10V DUTY CYCLE = 0.5%MAX 2.4 50 2.0 40 TJ = 175oC 1.6 30 1.2 20 TJ = 25oC 0.8 10 0.4 0 -80 -40 0 40 80 120 160 200 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source Temperature Voltage 1000 120 VGS = 0V PULSE DURATION = 80�s DUTY CYCLE = 0.5%MAX 100 100 TJ = 175oC 10 80 TJ = 175oC 1 60 TJ = 25oC 0.

其他MOSET晶体管: FDP26N40 , FDP26N40 , FDP2710 , FDP2710_F085 , FDP33N25 , FDP3651U , FDP3651U , FDP3672 , IRFB3306 , FDP3682 , FDP42AN15A0 , FDP51N25 , FDP52N20 , FDP52N20 , FDP5500_F085 , FDP55N06 , FDP5800 .