双极性晶体管datasheet-PDF中文资料大全

 

BC549 参数-双极性晶体管datasheet-PDF中文资料大全

制造商产品编号: BC549

材料: Si

晶体管极性: NPN

功耗 (Pd): 0.5

集电极--基极击穿电压 (Ucb): 30

集电极--发射极击穿电压 (Uce): 30

发射极--基极击穿电压 (Ueb): 6

最大集电极电流 (Ic): 0.1

工作温度最高值 (Tj), °C: 150

最大工作频率 (ft): 200

输出电容 (Cc), pF: 4.5

直流电流增益 (hfe): 110

晶体管封装类型: TO92

BC549 相互参照- 代换- 替换

BC549 PDF:

1.1. bc546abk_bc547abk_bc548abk_bc549abk_bc546bbk_bc547bbk_bc548bbk_bc549bbk_bc546cbk_bc547cbk_bc548cbk_bc549cbk.pdf Size:81K _update

BC549
BC549

BC546xBK ... BC549xBK BC546xBK ... BC549xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-03 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial

1.2. bc549_bc550.pdf Size:110K _motorola

BC549
BC549

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC549B/D Low Noise Transistors NPN Silicon BC549B,C BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC549 BC550 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 30 45 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current C

1.3. bc549.pdf Size:44K _philips

BC549
BC549

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 coll

1.4. bc549_bc550.pdf Size:231K _philips

BC549
BC549

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC549; BC550 NPN general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheet NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector

1.5. bc549_bc550_3.pdf Size:49K _philips

BC549
BC549

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 coll

1.6. bc546_bc547_bc548_bc549_bc550.pdf Size:44K _fairchild_semi

BC549
BC549

BC546/547/548/549/550 Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collecto

1.7. bc549b-c_bc550b-c.pdf Size:52K _diodes

BC549
BC549

Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit CollectorEmitter Voltage VCEO 30 45 Vdc CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc 1 Total Device Dissipation @ TA = 25C PD 625 mW 2 Derate above 25C 5.0 mW/C 3 Total Device Dissipation @ TC = 25C PD 1.5 Watt

1.8. bc549_bc550.pdf Size:355K _cdil

BC549
BC549

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC549,A.B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC550,A,B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C Low Noise Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC549 BC550 UNITS Collector Emitter Voltage VCEO 30 45 V Col

其他晶体管: BC547VI , BC548 , BC548A , BC548AP , BC548B , BC548BP , BC548C , BC548CP , D882 , BC549A , BC549AP , BC549B , BC549BP , BC549C , BC549CP , BC550 , BC550AP .

 


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