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BCR185
- 双极性晶体管. 目录. 参数. 数据表 (PDF) 制造商零件编号: BCR185
材料: Si
晶体管极性: PNP
最大耗散功率 (Pc): 0.2
集电极--基极击穿电压 (Ucb): 50
集电极--发射极击穿电压 (Uce): 50
发射极--基极击穿电压 (Ueb): 6
最大集电极电流 (Ic): 0.1
最大工作温度 (Tj), °C: 150
最大工作频率 (ft): 200
输出电容 (Cc), pF: 3
直流电流增益 (hfe): 80
封装形式: SOT23
BCR185
: 代换, 替换 BCR185
PDF doc:
1.1. bcr185w.pdf  Size:34K _siemens  |
 | BCR 185W
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1 = 10k?, R2 = 47k?)
Type Marking Ordering Code Pin Configuration Package
BCR 185W WNs Q62702-C2280 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 6
Input on Voltage Vi(on) 20
DC collector current IC 100 mA
Total power dissipation, TS = 124C Ptot 250 mW
Junction temperature Tj 150 C
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
1)
Junction ambient RthJA ? 240 K/W
Junction - soldering point RthJS ? 105
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 Nov-27-1996
BCR 185W
Electrical Characteristics at TA=25C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 A, IB = 0 50 |
1.2. bcr185s.pdf Size:43K _siemens  |
 | BCR 185S
PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated Transistors
in one package
Built in biase resistor (R1=10k?, R2=47k?)
Type Marking Ordering Code Pin Configuration Package
BCR 185S WNs UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 6
Input on Voltage Vi(on) 20
DC collector current IC 100 mA
Total power dissipation, TS = 115C Ptot 250 mW
Junction temperature Tj 150 C
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
1)
Junction ambient RthJA ? 275 K/W
Junction - soldering point RthJS ? 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 Nov-27-1996
BCR 185S
Electrical Characteristics at TA=25C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characte |
1.3. bcr185.pdf Size:35K _siemens  |
 | BCR 185
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1=10k?, R2=47k?)
Type Marking Ordering Code Pin Configuration Package
BCR 185 WNs Q62702-C2263 1=B 2=E 3=C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 6
Input on Voltage Vi(on) 20
DC collector current IC 100 mA
Total power dissipation, TS = 102C Ptot 200 mW
Junction temperature Tj 150 C
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
1)
Junction ambient RthJA ? 350 K/W
Junction - soldering point RthJS ? 240
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 Nov-27-1996
BCR 185
Electrical Characteristics at TA=25C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 A, IB = 0 50 - -
Collector-b |
其他晶体管: BCR158W
, BCR162
, BCR166
, BCR166W
, BCR169
, BCR169S
, BCR183
, BCR183S
, BD140
, BCR185S
, BCR185W
, BCR191
, BCR191S
, BCR192
, BCR196
, BCR196W
, BCR198
.
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