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MPSA70
- 双极性晶体管. 目录. 参数. 数据表 (PDF) 制造商零件编号: MPSA70
材料: Si
晶体管极性: PNP
最大耗散功率 (Pc): 0.33
集电极--基极击穿电压 (Ucb): 40
集电极--发射极击穿电压 (Uce): 40
发射极--基极击穿电压 (Ueb): 4
最大集电极电流 (Ic): 0.1
最大工作温度 (Tj), °C: 150
最大工作频率 (ft): 125
输出电容 (Cc), pF: 4
直流电流增益 (hfe): 40
封装形式: TO92
MPSA70
: 代换, 替换 MPSA70
数据表 (PDF)
1.1. mpsa70re.pdf Size:427K _motorola |
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S
S
R , SOURCE RESISTANCE (OHMS)
R , SOURCE RESISTANCE (OHMS)
S
R , SOURCE RESISTANCE (OHMS)
MPSA70
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C
25C
200
55C
100
80
MPSA70
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
1.0 100
TA = 25C IB = 400 A
TA = 25C
PULSE WIDTH = 300 s
MPSA70
350 A
DUTY CYCLE ? 2.0%
0.8 80
300 A
250 A |
1.2. mpsa20_mpsa70.pdf Size:52K _central 1.3. mpsa70.pdf Size:104K _onsemi |
| k
20 k
en2 ) 4KTRS ) In 2RS2 1 2
NF + 20 log10
4KTRS
10 k
0.5 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
5.0 k
In = Noise Current of the Transistor referred to the input. (Figure 4)
2.0 k
1.0 dB
K = Boltzmans Constant (1.38 x 10-23 j/K)
1.0 k
T = Temperature of the Source Resistance (K)
2.0 dB
500
RS = Source Resistance (Ohms)
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband
h |
其他晶体管: MPSA45
, MPSA55
, MPSA56
, MPSA62
, MPSA63
, MPSA64
, MPSA65
, MPSA66
, BU508
, MPSA75
, MPSA76
, MPSA77
, MPSA92
, MPSA93
, MPSA94
, MPSD01
, MPSD02
.
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