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BC858BL
- 双极性晶体管. 目录. 参数. 数据表 (PDF) 制造商零件编号: BC858BL
材料: Si
晶体管极性: PNP
最大耗散功率 (Pc): 0.225
集电极--基极击穿电压 (Ucb): 0
集电极--发射极击穿电压 (Uce): 30
发射极--基极击穿电压 (Ueb): 0
最大集电极电流 (Ic): 0.1
最大工作温度 (Tj), °C:
最大工作频率 (ft): 100
输出电容 (Cc), pF:
直流电流增益 (hfe): 220
封装形式: SOT23-3
BC858BL
: 代换, 替换 BC858BL
数据表 (PDF)
4.1. bc858bw-b.pdf  Size:141K _rohm  |
 | Ta=25?C Ta=25?C Ta=25?C
IC / IB=10 VCC=40V IC=10IB1=10IB2
IC / IB=10
40V
15V
VCE=3V
40V
15V
100 100 100
VCC=3V
10 10 10
1.0 10 100 1.0 10 100 1.0 10 100
COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA)
Fig.9 Turn-on time vs. collector current
Fig.10 Rise time vs. collector current Fig.11 Storage time vs. collector current
1000 50
100
Ta=25?C Ta=25?C
Ta=25?C
VCC=40V 300MHz
f=1MHz
IC=10IB1=10IB2
100MHz
200MHz
300MHz
10
Cib
100 10
Cob
200 |
4.2. bc858bw.pdf Size:141K _rohm  |
 | Ta=25?C Ta=25?C Ta=25?C
IC / IB=10 VCC=40V IC=10IB1=10IB2
IC / IB=10
40V
15V
VCE=3V
40V
15V
100 100 100
VCC=3V
10 10 10
1.0 10 100 1.0 10 100 1.0 10 100
COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA)
Fig.9 Turn-on time vs. collector current
Fig.10 Rise time vs. collector current Fig.11 Storage time vs. collector current
1000 50
100
Ta=25?C Ta=25?C
Ta=25?C
VCC=40V 300MHz
f=1MHz
IC=10IB1=10IB2
100MHz
200MHz
300MHz
10
Cib
100 10
Cob
200 |
4.3. bc858bw_bc858b.pdf Size:81K _rohm  |
 | 15V
100 100 100
VCC=3V
10 10 10
1.0 10 100 1.0 10 100 1.0 10 100
COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA)
Fig.9 Turn-on time vs. collector current
Fig.10 Rise time vs. collector current Fig.11 Storage time vs. collector current
1000 50
100
Ta=25?C Ta=25?C
Ta=25?C
VCC=40V 300MHz
f=1MHz
IC=10IB1=10IB2
100MHz
200MHz
300MHz
10
Cib
100 10
Cob
200MHz
100MHz
1.0
10 0.5
1
1.0 10 100 0.5 1 10 100 500
0.5 110 50
COLLECTOR CURRENT : IC(mA |
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