双极性晶体管datasheet-PDF中文资料大全

 

CXT5551E 参数-双极性晶体管datasheet-PDF中文资料大全

制造商产品编号: CXT5551E

材料: Si

晶体管极性: NPN

功耗 (Pd): 1.2

集电极--基极击穿电压 (Ucb): 250

集电极--发射极击穿电压 (Uce): 220

发射极--基极击穿电压 (Ueb): 6

最大集电极电流 (Ic): 0.6

工作温度最高值 (Tj), °C: 150

最大工作频率 (ft): 100

输出电容 (Cc), pF: 6

直流电流增益 (hfe): 120

晶体管封装类型: SOT89

CXT5551E 相互参照- 代换- 替换

CXT5551E PDF:

1.1. cxt5551e.pdf Size:290K _central

CXT5551E
CXT5551E

CXT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: • High Collector Breakdown Voltage: 250V SOT-89 CASE • Low

3.1. cxt5551hc.pdf Size:283K _central

CXT5551E
CXT5551E

CXT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RAT

3.2. cxt5551.pdf Size:731K _htsemi

CXT5551E
CXT5551E

CXT5551 TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage 1 Applications such as telephony 1. BASE Low current(max. 600mA) 2. COLLECTOR High voltage(max.180v) 3. EMITTER Marking: 1G6 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEB

3.3. cxt5551.pdf Size:248K _lge

CXT5551E
CXT5551E

CXT5551 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 1.4 1.4 Features 2.6 4.25 Switching and amplification in high voltage 2.4 3.75 Applications such as telephony 0.8 MIN Low current(max. 600mA) 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 High voltage(max.180v) 0.37 1.5 3.0 Marking: 1G6 Dimensions in inches and (millim

3.4. cxt5551.pdf Size:1000K _kexin

CXT5551E
CXT5551E

SMD Type Transistors NPN Transistors CXT5551 (KXT5551) Features 1.70 0.1 High current (max. 600mA). Low voltage (max. 160 V). ● Comlementary to CXT5401 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

其他晶体管: CSA1162 , CSC2712 , CXT3090L , CXT3150 , CXT3410 , CXT3820 , CXT491E , CXT5401E , AC125 , CXT5551HC , CXT591E , CXT7090L , CXT7410 , CXT7820 , RN2609 , CTLM3410-M832D , CTLM3474-M832D .

 


CXT5551E
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CXT5551E
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