双极性晶体管datasheet-PDF中文资料大全

 

CXT591E 参数-双极性晶体管datasheet-PDF中文资料大全

制造商产品编号: CXT591E

材料: Si

晶体管极性: PNP

功耗 (Pd): 1.2

集电极--基极击穿电压 (Ucb): 80

集电极--发射极击穿电压 (Uce): 60

发射极--基极击穿电压 (Ueb): 5

最大集电极电流 (Ic): 1

工作温度最高值 (Tj), °C: 150

最大工作频率 (ft): 150

输出电容 (Cc), pF: 10

直流电流增益 (hfe): 200

晶体管封装类型: SOT89

CXT591E 相互参照- 代换- 替换

CXT591E PDF:

1.1. cxt591e.pdf Size:528K _central

CXT591E
CXT591E

CXT591E www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CXT591E is a silicon PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collect

其他晶体管: CXT3090L , CXT3150 , CXT3410 , CXT3820 , CXT491E , CXT5401E , CXT5551E , CXT5551HC , 2N4403 , CXT7090L , CXT7410 , CXT7820 , RN2609 , CTLM3410-M832D , CTLM3474-M832D , CTLM7410-M832D , CTLT3410-M621 .

 


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