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IKW50N60H3 . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IKW50N60H3

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 333W

Kollektor-Emitter-Sperrspannung (Uce): 600V

Kollektor-Emitter Sättigungsspannung (Ucesat): 1.85V

Gate-Emitter-Spitzenspannung (Ueg):

Kollektor-Dauergleichstrom (Ic): 100A

Höchstzulässige Sperrschichttemperatur (Tj), °C:

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für IKW50N60H3 Transistor

IKW50N60H3 PDF doc:

1.1. ikw50n60h3_rev1_1g.pdf Size:1642K _infineon

IKW50N60H3
IKW50N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very low V CEsat low

2.1. ikw50n60trev2_4g.pdf Size:412K _infineon

IKW50N60H3
IKW50N60H3

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for

Anderen IGBT... IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , SKA06N60 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 .

 


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IGBT BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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