IRG4PH40U . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRG4PH40U

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 160W

Kollektor-Emitter-Sperrspannung (Uce): 1200V

Kollektor-Emitter Sättigungsspannung (Ucesat):

Gate-Emitter-Spitzenspannung (Ueg):

Kollektor-Dauergleichstrom (Ic): 15A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 175

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO247AC

Ersatz (vergleichstyp) für IRG4PH40U Transistor

IRG4PH40U - PDF-Dokument zum Download bereitstellen...

1.1. irg4ph40ud.pdf Size:220K _international_rectifier

s Collector Current 41 IC @ TC = 100°C Continuous Collector Current 21 ICM Pulsed Collector Current Q 82 ILM Clamped Inductive Load Current R 82 A IF @ TC = 100°C Diode Continuous Forward Current 8.0 IFM Diode Maximum Forward Current 130 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063

1.2. irg4ph40u.pdf Size:163K _international_rectifier

Load Current R 82 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy S 270 mJ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 0.77 R?CS Case-to-Sink

2.1. irg4ph40kd.pdf Size:217K _international_rectifier

to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 30 IC @ TC = 100°C Continuous Collector Current 15 ICM Pulsed Collector Current Q 60 A ILM Clamped Inductive Load Current R 60 IF @ TC = 100°C Diode Continuous Forward Current 8.0 IFM Diode Maximum Forward Current 130 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +

2.2. irg4ph40s.pdf Size:127K _international_rectifier

erature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 0.77 R?CS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W R?JA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 6.0(0.21) ––– g (oz) www.irf.com 1 9/23/98 IRG4PH40S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-

2.3. irg4ph40k.pdf Size:157K _international_rectifier

uous Collector Current 15 A ICM Pulsed Collector Current Q 60 ILM Clamped Inductive Load Current R 60 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy S 180 mJ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw.

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