IGBT

Zwischen 3 und 20 Zeichen (nur Zahlen und Buchstaben)
 
IXGH17N100A
  IXGH17N100A
  IXGH17N100A
 
IXGH17N100A
  IXGH17N100A
  IXGH17N100A
 
IXGH17N100A
  IXGH17N100A
 
 
Liste
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30KD
IRG4PH40K ..IRGP4066D-E
IRGP4068D ..IXDN50N120AU1
IXDN55N120 ..IXGH15N120BD1
IXGH15N120C ..IXGH40N120C3
IXGH40N120C3D1 ..IXGN200N60B3
IXGN320N60A3 ..IXGR60N60B2
IXGR60N60B2D1 ..IXGX32N170AH1
IXGX32N170H1 ..IXSP24N60B
IXSQ10N60B2D1 ..MGS05N60D
MGS13002D ..MIXA80W1200TED
MIXA80W1200TED ..MWI80-12T6K
NGB15N41CLT4 ..RJP60D0DPP-M0
RJP60F0DPE ..SGU15N40L
SGU1N60XFD ..SKM40GD123D
SKM40GD124D ..STGB10NC60K
STGB10NC60KD ..STGW30N120KD
STGW30N90D ..VWI35-06P1
 
Alle IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.
 

IXGH17N100A . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXGH17N100A

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Uce): 1000V

Kollektor-Emitter Sättigungsspannung (Ucesat):

Gate-Emitter-Spitzenspannung (Ueg):

Kollektor-Dauergleichstrom (Ic): 34A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit: 450

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für IXGH17N100A Transistor

IXGH17N100A - PDF-Dokument zum Download bereitstellen...

5.1. ixgp10n60-a_ixga10n60-a_ixgh10n60-a.pdf Size:56K _ixys

IXGH17N100A
 Datasheet IXGH17N100A
 Equivalent HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Symbol Test Conditions Characteristic Values Applications (TJ = 25°C, unless otherwise specified) AC motor speed control min. typ. max. DC servo and robot drives DC choppers BVCES IC = 250 µA, VGE = 0 V 600 V Uninterruptible power supplies (UPS) VGE(th) IC = 250 µA, VCE = VGE 2.5 5 V Switch-mode and resonant-mode power supplies ICES VCE = 0.8 •

5.2. ixgh10n170a_ixgt10n170a.pdf Size:565K _ixys

IXGH17N100A
 Datasheet IXGH17N100A
 Equivalent or 10 s - drive simplicity Weight TO-247 6 g Rugged NPT structure TO-268 4 g Molding epoxies meet UL 94 V-0 flammability classification Applications Pulser circuits Symbol Test Conditions Characteristic Values AC motor speed control (TJ = 25°C, unless otherwise specified) min. typ. max. DC servo and robot drives DC choppers BVCES IC = 250 µA, VGE = 0 V 1700 V Uninterruptible power supplies (UPS) VGE(th) IC = 250 µA, VCE = VGE 3.0 5.0 V Switched-mode and r

5.3. ixgh10n300.pdf Size:226K _ixys

IXGH17N100A
 Datasheet IXGH17N100A
 Equivalent Circuits Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified Min. Typ. Max. High Power Density BVCES IC = 250?A, VGE = 0V 3000 V Easy to Mount VGE(th) IC = 250?A, VCE = VGE 3.0 5.0 V ICES VCE = 0.8 • VCES, VGE= 0V 25 ?A TJ = 125°C 500 ?A IGES VCE = 0V, VGE = ±20V ±100 nA VCE(sat) IC = 10A, VGE = 15V 3.5 V IC = 30A 5.2 V © 2009 IXYS CORPORATION, All Rights Reserved DS100151(05/09) IXGH10N300 Symbol Test Conditions Characteristic Val

5.4. ixgh12n100_ixgh12n100a.pdf Size:35K _ixys

IXGH17N100A
 Datasheet IXGH17N100A
 Equivalent J = 25°C, unless otherwise specified) - drive simplicity Min. Typ. Max. • Voltage rating guaranteed at high temperature (125°C) BVCES IC = 3 mA, VGE = 0 V 1000 V BVCES temperature coefficient 0.072 %/K Applications • AC motor speed control VGE(th) IC = 500 mA, VGE = VGE 2.5 5.5 V • DC servo and robot drives • DC choppers VGE(th) temperature coefficient -0.192 %/K • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode ICES VCE = 0.8 VCES TJ = 25°C 250 mA power suppl

5.5. ixgh15n120b_ixgt15n120b.pdf Size:529K _ixys

IXGH17N100A
 Datasheet IXGH17N100A
 Equivalent - drive simplicity Applications Symbol Test Conditions Characteristic Values • AC motor speed control (TJ = 25°C, unless otherwise specified) • DC servo and robot drives min. typ. max. • DC choppers • Uninterruptible power supplies (UPS) BVCES IC = 250 µA, VGE = 0 V 1200 V • Switched-mode and resonant-mode VGE(th) IC = 250 µA, VCE = VGE 2.5 5 V power supplies ICES VCE = VCES TJ = 25°C 100 µA Advantages VGE = 0 V TJ = 125°C 3.5 mA • High power density IGES VCE = 0 V, VGE = ±20 V ±100

5.6. ixga12n120a3_ixgp12n120a3_ixgh12n120a3.pdf Size:201K _ixys

IXGH17N100A
 Datasheet IXGH17N100A
 Equivalent Weight TO-263 2.5 g International Standard Packages TO-220 3.0 g TO-247 6.0 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified Min. Typ. Max. Applications BVCES IC = 250?A, VGE = 0V 1200 V Power Inverters VGE(th) IC = 250?A, VCE = VGE 2.5 5.0 V UPS Motor Drives ICES VCE = VCES, VGE = 0V 10 ?A SMPS TJ = 125°C 275 ?A PFC Circuits IGES VCE = 0V, VGE = ±20V ±100 nA B

Anderen IGBT... IXGH12N60C , IXGH12N60CD1 , IXGH12N90C , IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , IXGH17N100 , MII400-12E4 , IXGH17N100AU1 , IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B .

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