IXGH24N60C . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXGH24N60C

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 150W

Kollektor-Emitter-Sperrspannung (Uce): 600V

Kollektor-Emitter Sättigungsspannung (Ucesat):

Gate-Emitter-Spitzenspannung (Ueg): 30V

Kollektor-Dauergleichstrom (Ic): 48A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit: 60

Kollektor-Kapazität (Cc), pF: 1500pF

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für IXGH24N60C Transistor

IXGH24N60C - PDF-Dokument zum Download bereitstellen...

1.1. ixgh24n60aui.pdf Size:117K _ixys

O-247 SMD 4 g Low VCE(sat) TO-247 AD 6 g - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions Characteristic Values Applications (TJ = 25°C, unless otherwise specified) AC motor speed control min. typ. max. DC servo and robot drives DC choppers BVCES IC = 750 µA, VGE = 0 V 600 V Uninterruptible power supplies (UPS) Switch-mode and resonant-mode VGE(th) IC = 250 µA, VCE

3.1. ixgh24n170a_ixgt24n170a.pdf Size:519K _ixys

0 s Rugged NPT structure Weight TO-247 6 g Molding epoxies meet UL 94 V-0 TO-268 4 g flammability classification Applications Capacitor discharge & pulser circuits AC motor speed control Symbol Test Conditions Characteristic Values DC servo and robot drives (TJ = 25°C, unless otherwise specified) min. typ. max. DC choppers Uninterruptible power supplies (UPS) BVCES IC = 250 µA, VGE = 0 V 1700 V Switched-mode and resonant-mode VGE(th) IC = 250 µA, VCE = VGE

5.1. ixgh20n60-a_ixgm20n60-a.pdf Size:64K _ixys

ge rating guaranteed at high temperature (125°C) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control BVCES IC = 250 µA, VGE = 0 V 600 V DC servo and robot drives DC choppers VGE(th) IC = 250 µA, VCE = VGE 2.5 5 V Uninterruptible power supplies (UPS) ICES VCE = 0.8 • VCES TJ = 25°C 200 µA Switch-mode and resonant-mode VGE = 0 V TJ = 125°C1 mA power supplies IGES VCE = 0 V, VGE = ±20 V ±100 nA Advan

5.2. ixgh28n120b_ixgt28n120b.pdf Size:575K _ixys

s JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on Symbol Test Conditions Characteristic Values - drive simplicity (TJ = 25°C, unless otherwise specified) min. typ. max. Advantages BVCES IC = 250 µA , VGE = 0 V 1200 V High power density VGE(th) IC = 250 µA, VCE = VGE 2.5 5 V Suitable for surface mounting ICES VCE = VCES, VGE= 0 V TJ = 25°C25 µA Easy to mount with 1 screw, (isolated mounting screw hole) IGES VCE = 0 V, VGE = ±20 V

5.3. ixga20n120a3_ixgh20n120a3_ixgp20n120a3.pdf Size:236K _ixys

ion Losses TO-220 3.0 g International Standard Packages TO-247 6.0 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. Applications BVCES IC = 250?A, VGE = 0V 1200 V Power Inverters VGE(th) IC = 250?A, VCE = VGE 2.5 5.0 V UPS ICES VCE = VCES, VGE = 0V 25 ?A Motor Drives TJ = 125°C 1 mA SMPS PFC Circuits IGES VCE = 0V, VGE = ±20V ±100 nA Battery

5.4. ixgh20n100_ixgt20n100.pdf Size:53K _ixys

e turn-on - drive simplicity Applications • AC motor speed control Symbol Test Conditions Characteristic Values • DC servo and robot drives (TJ = 25°C, unless otherwise specified) • DC choppers min. typ. max. • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode BVCES IC = 1 mA, VGE = 0 V 1000 V power supplies VGE(th) IC = 250 mA, VCE = VGE 2.5 5 V • Capacitor discharge ICES VCE = VCES TJ = 25°C 250 mA Advantages VGE = 0 V TJ = 125°C1 mA • High power density

5.5. ixgh25n160_ixgt25n160.pdf Size:142K _ixys

ugged NPT structure International standard packages Weight TO-247 6 g - JEDEC TO-268 and TO-268 4 g - JEDEC TO-247 AD Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Applications min. typ. max. Capacitor discharge Pulser circuits BVCES IC = 250 ?A, VGE = 0 V 1600 V VGE(th) IC = 250 ?A, VCE = VGE 3.0 5.0 V Advantages ICES VCE = 0.8 • VCES 50 ?A High power density VGE =

5.6. ixgh20n120b_ixgt20n120b.pdf Size:568K _ixys

nal standard packages JEDEC TO-268 surface and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on Symbol Test Conditions Characteristic Values - drive simplicity (TJ = 25°C, unless otherwise specified) min. typ. max. Advantages BVCES IC = 250 µA, VGE = 0 V 1200 V High power density VGE(th) IC = 250 µA, VCE = VGE 2.5 5 V Suitable for surface mounting ICES VCE = VCES TJ = 25°C50 µA Easy to mount with 1 screw, (isolated mounting screw hole) IGES VCE = 0

5.7. ixgh20n120_ixgt20n120.pdf Size:106K _ixys

t Conditions Characteristic Values •DC choppers (TJ = 25°C, unless otherwise specified) Min. Typ. Max. •Uninterruptible power supplies (UPS) •Switch-mode and resonant-mode BVCES IC = 1 mA, VGE = 0 V 1200 V power supplies VGE(th) IC = 250 µA, VCE = VGE 2.5 5.0 V •Capacitor discharge ICES VCE = VCES TJ = 25°C 250 µA VGE = 0 V TJ = 125°C1 mA Advantages IGES VCE = 0 V, VGE = ±20 V ±100 nA •Easy to mount with one screw •Reduces assembly time and cost VCE(sat) IC = IC90, VGE = 15 V 2.0 2.

Anderen IGBT... IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , IXGH24N60BU1 , G12N60C3D , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IXGH25N120 , IXGH28N30 , IXGH28N30A .