IPG20N04S4L-08 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IPG20N04S4L-08

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 54

Maximale Drain-Source-Spannung (Uds): 40V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 20

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.0082

Transistorgehäuse: PGTDSON84

Ersatz (vergleichstyp) für IPG20N04S4L-08 Transistor

IPG20N04S4L-08 - PDF-Dokument zum Download bereitstellen...

1.1. ipg20n04s4l-11_ds_1_0.pdf Size:156K _infineon

Symbol Conditions Values Unit min. typ. max. Thermal characteristics2) R - Thermal resistance, junction - case - - 3.7 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 6 cm2 cooling area3) - 60 - Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I = 15µA Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =40 V, V =0 V, DS GS - 0.01

1.2. ipg20n04s4-09_ds_1_0.pdf Size:141K _infineon

bol Conditions Values Unit min. typ. max. Thermal characteristics2) R - Thermal resistance, junction - case - - 2.8 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 6 cm2 cooling area3) - 60 - Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I = 22µA Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS - 0.01 1 µ

1.3. ipg20n04s4l-08_ds_1_0.pdf Size:157K _infineon

Symbol Conditions Values Unit min. typ. max. Thermal characteristics2) R - Thermal resistance, junction - case - - 2.8 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 6 cm2 cooling area3) - 60 - Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I = 22µA Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =40 V, V =0 V, DS GS - 0.01

1.4. ipg20n04s4l-07_ds_1_0.pdf Size:156K _infineon

Symbol Conditions Values Unit min. typ. max. Thermal characteristics2) R - Thermal resistance, junction - case - - 2.3 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 6 cm2 cooling area3) - 60 - Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I = 30µA Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =40 V, V =0 V, DS GS - 0.01

1.5. ipg20n04s4-08_ds_1_0.pdf Size:157K _infineon

bol Conditions Values Unit min. typ. max. Thermal characteristics2) R - Thermal resistance, junction - case - - 2.3 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 6 cm2 cooling area3) - 60 - Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I = 30µA Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS - 0.01 1 µ

1.6. ipg20n04s4-12_ds_1_0.pdf Size:159K _infineon

bol Conditions Values Unit min. typ. max. Thermal characteristics2) R - Thermal resistance, junction - case - - 3.7 K/W thJC R SMD version, device on PCB minimal footprint - 100 - thJA 6 cm2 cooling area3) - 60 - Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I = 15µA Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS - 0.01 1 µ

Anderen MOSET... IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 , J111 , IPG20N04S4L-11 , IPG20N06S2L-35 , IPG20N06S2L-50 , IPG20N06S2L-65 , IPG20N06S4-15 , IPG20N06S4L-11 , IPG20N06S4L-14 , IPG20N06S4L-26 .