| |
IPG20N06S4-15
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: IPG20N06S4-15
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 50
Maximale Drain-Source-Spannung (Uds): 60V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 20
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.0155
Transistorgehäuse: PGTDSON84
Ersatz (vergleichstyp) für IPG20N06S4-15
Transistor IPG20N06S4-15
- PDF-Dokument zum Download bereitstellen...
1.1. ipg20n06s4-15_ds_1_0.pdf  Size:157K _infineon  |
 | bol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 3 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
6 cm2 cooling area3) - 60 -
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 60 - - V
(BR)DSS GS D
V V =V , I =20 µA
Gate threshold voltage 2.0 3.0 4.0
GS(th) DS GS D
V =60 V, V =0 V,
DS GS
- 0.01 1 µA
|
1.2. ipg20n06s2l-50_ds_10.pdf Size:162K _infineon  |
 | ge 1 2009-09-07
IPG20N06S2L-50
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 2.9 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
6 cm2 cooling area3) - 60 -
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 55 - - V
(BR)DSS GS D
V V =V , I =19 µA
Gate threshold voltage 1.2 1.6 2.0
GS(t |
1.3. ipg20n06s2l-65_ds_10.pdf Size:162K _infineon  |
 | 1 2009-09-07
IPG20N06S2L-65
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics1)
R -
Thermal resistance, junction - case - - 3.5 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
6 cm2 cooling area2) - 60 -
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 55 - - V
(BR)DSS GS D
V V =V , I =14 µA
Gate threshold voltage 1.2 1.6 2.0
GS(th) |
1.4. ipg20n06s4l-11_ds_1_0.pdf Size:157K _infineon  |
 | Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 2.3 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
6 cm2 cooling area3) - 60 -
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 60 - - V
(BR)DSS GS D
V V =V , I = 28µA
Gate threshold voltage 1.2 1.7 2.2
GS(th) DS GS D
V =60 V, V =0 V,
DS GS
- 0.01 |
1.5. ipg20n06s4l-26_ds_1_0.pdf Size:144K _infineon  |
 | mbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 4.5 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
6 cm2 cooling area3) - 60 -
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 60 - - V
(BR)DSS GS D
V V =V , I = 10µA
Gate threshold voltage 1.2 1.7 2.2
GS(th) DS GS D
V =60 V, V =0 V,
DS GS
- 0.01 1 |
1.6. ipg20n06s2l-35_ds_10.pdf Size:162K _infineon  |
 | age 1 2009-09-07
IPG20N06S2L-35
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 2.3 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
6 cm2 cooling area3) - 60 -
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 55 - - V
(BR)DSS GS D
V V =V , I =27 µA
Gate threshold voltage 1.2 1.6 2.0
GS( |
1.7. ipg20n06s4l-14_ds_1_0.pdf Size:158K _infineon  |
 | Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 3 K/W
thJC
R
SMD version, device on PCB minimal footprint - 100 -
thJA
6 cm2 cooling area3) - 60 -
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 60 - - V
(BR)DSS GS D
V V =V , I = 20µA
Gate threshold voltage 1.2 1.7 2.2
GS(th) DS GS D
V =60 V, V =0 V,
DS GS
- 0.01 1 |
Anderen MOSET... IPG20N04S4-09
, IPG20N04S4-12
, IPG20N04S4L-07
, IPG20N04S4L-08
, IPG20N04S4L-11
, IPG20N06S2L-35
, IPG20N06S2L-50
, IPG20N06S2L-65
, IRF1407
, IPG20N06S4L-11
, IPG20N06S4L-14
, IPG20N06S4L-26
, IPI100N04S3-03
, IPI100N08S2-07
, IPI100N10S3-05
, IPI100P03P3L-04
, IPI120N04S3-02
.
|
