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IPI120N06S4-03
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: IPI120N06S4-03
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 167
Maximale Drain-Source-Spannung (Uds): 60V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 120
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.0032
Transistorgehäuse: PGTO26231
Ersatz (vergleichstyp) für IPI120N06S4-03
Transistor IPI120N06S4-03
- PDF-Dokument zum Download bereitstellen...
1.1. ipp120n06s4_ipb120n06s4_ipi120n06s4-02.pdf  Size:170K _infineon  |
 | limatic category; DIN IEC 68-1 55/175/56
Rev. 1.2 page 1 2009-07-01
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R
Thermal resistance, junction - case - - 0.8 K/W
thJC
Thermal resistance, junction -
R
-- 62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
6 cm2 cooling area3) -- 40
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static char |
1.2. ipp120n06s4_ipb120n06s4_ipi120n06s4-03.pdf Size:170K _infineon  |
 | stg
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Rev. 1.0 page 1 2009-03-23
IPB120N06S4-03
IPI120N06S4-03, IPP120N06S4-03
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 0.9 K/W
thJC
Thermal resistance, junction -
R -- - 62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
6 cm2 cooling area3) -- 40
Electrical characteristics, at T =25 °C, unless otherwise specifi |
2.1. ipp120n04s4-01_ipb120n04s4-01_ipi120n04s4-01.pdf Size:159K _infineon  |
 |
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Rev. 1.0 page 1 2010-04-12
IPB120N04S4-01
IPI120N04S4-01, IPP120N04S4-01
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R -
Thermal resistance, junction - case - - 0.8 K/W
thJC
Thermal resistance, junction -
R -- - 62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
6 cm2 cooling area3) -- 40
Electrical characteristics, at T =25 °C, unless otherwise specified
j |
2.2. ipp120n04s3_ipb120n04s3_ipi120n04s3-02.pdf Size:191K _infineon  |
 | climatic category; DIN IEC 68-1 55/175/56
Rev. 1.0 page 1 2007-04-30
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics2)
R
Thermal resistance, junction - case - - 0.5 K/W
thJC
Thermal resistance, junction -
R
-- 62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
6 cm2 cooling area3) -- 40
Electrical characteristics, at T =25 °C, unless otherwise specified
j
Static cha |
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