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SPB07N60S5
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: SPB07N60S5
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 83
Maximale Drain-Source-Spannung (Uds): 600V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 7.3
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.6
Transistorgehäuse: D2PAK_(TO263)
Ersatz (vergleichstyp) für SPB07N60S5
Transistor SPB07N60S5
- PDF-Dokument zum Download bereitstellen...
1.1. spb07n60s5_rev.2.3.pdf  Size:646K _infineon  |
 | Unit
Drain Source voltage slope dv/dt 20 V/ns
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
RthJC - - 1.5 K/W
Thermal resistance, junction - case
RthJA -
Thermal resistance, junction - ambient, leaded - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -
Soldering temperature, reflow soldering, MSL1 Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at |
2.1. spb07n60c3_rev.2.5.pdf Size:1389K _infineon  |
 | Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
RthJC - - 1.5 K/W
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9
RthJA - - 62
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB: RthJA
@ min. footprint - - |
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