IRFSL31N20D MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRFSL31N20D

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 200

Maximale Drain-Source-Spannung (Uds): 200V

Maximale Gate-Source-Spannung (Ugs): 30

Maximaler Drainstrom (Id): 31

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.082

Transistorgehäuse: TO262

Ersatz (vergleichstyp) für IRFSL31N20D Transistor

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5.1. irfsl11n50a.pdf Size:107K _international_rectifier

from case ) Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 0.75 °C R?JA Junction-to-Ambient ––– 40 www.irf.com 1 9/2/99 IRFSL11N50A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.57 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance –

5.2. irfsl9n60a.pdf Size:132K _international_rectifier

ed Forward Main Switch Notes through are on page 8 12/23/98 Document Number: 90362 www.vishay.com 1 IRFSL9N60A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.75 ? VGS = 10V, ID = 5.5A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 600V, VGS = 0V IDSS Drain-to-Source Leak

5.3. irfsl11n50apbf.pdf Size:827K _international_rectifier

IGN AT E S L E AD -F R E E AS S E MB L Y PR ODU CT (OPT I ONAL ) L OT C ODE YE AR 7 = 1997 WE EK 19 A = AS S E M B L Y S IT E COD E Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 04/04 Document Number: 91288 www.vishay.com 8 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its

5.4. irfsl11n50.pdf Size:111K _international_rectifier

ds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 0.75 °C R?JA Junction-to-Ambient ––– 40 www.irf.com 1 2/7/2000 IRFSL11N50A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.57 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source

5.5. irfsl11n50a_sihfsl11n50a.pdf Size:305K _vishay

Single Pulse Avalanche Energyb EAS 390 mJ Repetitive Avalanche Currenta IAR 11 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 4.1 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.4 mH, RG = 25 ?,

5.6. irfsl9n60a_sihfsl9n60a.pdf Size:194K _vishay

IT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 TC = 25 °C 9.2 Continuous Drain Current VGS at 10 V ID TC = 100 °C 5.8 A Pulsed Drain Currenta IDM 37 Linear Derating Factor 1.3 W/°C Single Pulse Avalanche Energyb EAS 290 mJ Repetitive Avalanche Currenta IAR 9.2 A Repetitive Avalanche Energya EAR 17 mJ Maximum Power Dissipation TC = 25 °C PD 170 W Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 1

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