IRLR3802 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRLR3802

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 88

Maximale Drain-Source-Spannung (Uds): 12V

Maximale Gate-Source-Spannung (Ugs): 12

Maximaler Drainstrom (Id): 84

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.0085

Transistorgehäuse: DPak

Ersatz (vergleichstyp) für IRLR3802 Transistor

IRLR3802 - PDF-Dokument zum Download bereitstellen...

1.1. irlr3802.pdf Size:143K _international_rectifier

ion-to-Ambient ––– 110 Notes through „ are on page 9 www.irf.com 1 8/22/02 IRLR/U3802 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, ID = 250µA ??VDSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.009 ––– V/°C Reference to 25°C, ID = 1mA ? ––– 6.5 8.5 VGS = 4.5V, ID = 15A ? RDS(on) Static Drain-to-Source On-Resistance m? ––– ––– 30 VGS = 2.8V, ID = 12A VGS(th) Gate Threshold Vo

5.1. irlr3715.pdf Size:122K _international_rectifier

ent ––– 110 °C/W R?JA Junction-to-Ambient (PCB mount) ––– 50 Notes through are on page 10 www.irf.com 1 06/28/01 IRLR/U3715 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA ––– 11 14 VGS = 10V, ID = 26A m? RDS(on) Static Drain-to-Source On-Resistance ––– 15 20 VGS

5.2. irlr3103.pdf Size:204K _international_rectifier

ute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 107 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 240 mJ IAR Avalanche Current 34 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage T

5.3. irlr3105.pdf Size:185K _international_rectifier

rough-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 25 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 18 A IDM Pulsed Drain Current 100 PD @TC = 25°C Power Dissipation 57 W Linear Derating Factor 0.38 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy‚ 61 mJ EAS (tested) Single Pulse Aval

5.4. irlr3915.pdf Size:581K _international_rectifier

) 43 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 30 IDM Pulsed Drain Current 240 PD @TC = 25°C Power Dissipation 120 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy‚ 200 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value‡ 600 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy† mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering T

5.5. irlr3714.pdf Size:111K _international_rectifier

to-Ambient ––– 50 R?JA Junction-to-Ambient (PCB mount) ––– 110 Notes through are on page 10 www.irf.com 1 06/15/01 IRLR3714/IRLU3714 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA ––– 15 20 VGS = 10V, ID = 18A RDS(on) Static Drain-to-Source On-Resistance m? ––– 2

5.6. irlr3715z.pdf Size:204K _international_rectifier

meter Typ. Max. Units R?JC Junction-to-Case ––– 3.75 °C/W Junction-to-Ambient (PCB Mount) R?JA ––– 50 R?JA Junction-to-Ambient ––– 110 Notes through … are on page 11 www.irf.com 1 04/02/03 IRLR/U3715Z Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ??VDSS/?TJ Breakdown Voltage Temp. Coefficient ––– 13 ––– mV/°C Reference to 25°C, ID = 1mA m? RDS(on) Static Drain

5.7. irlr3303.pdf Size:139K _international_rectifier

Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 35 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 25 A IDM Pulsed Drain Current 140 PD @TC = 25°C Power Dissipation 68 W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 130 mJ IAR Avalanche Current 20 A EAR Repetitive Avalanche Energy 6.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temp

5.8. irlr3410.pdf Size:158K _international_rectifier

solute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 60 PD @TC = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 150 mJ IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 7.9 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage

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