SSM6K22FE MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: SSM6K22FE

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 20V

Maximale Gate-Source-Spannung (Ugs): 12

Maximaler Drainstrom (Id): 1.4

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.17

Transistorgehäuse: SOT563/ES6

Ersatz (vergleichstyp) für SSM6K22FE Transistor

SSM6K22FE - PDF-Dokument zum Download bereitstellen...

1.1. ssm6k22fe.pdf Size:278K _toshiba

otected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2004-01-16 SSM6K22FE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit - - Gate leakage current IGSS VGS = ±?12 V, VDS = 0 ±1 µA V (BR) DSS ID = 1 mA, VGS = 0 20 - - Drain-Source breakdown voltage V V (BR) DSX ID = 1 mA, VGS = -12 V 12

4.1. ssm6k204fe_071101.pdf Size:197K _toshiba

t/voltage, etc.) are within the JEDEC ? absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA ? Toshiba Semiconductor Reliability Handbook (“Handling TOSHIBA 2-2N1A Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure Weight: 3 mg (typ.) rate, etc). Note 1: Mounted on an FR4 board (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta

4.2. ssm6k203fe_071101.pdf Size:198K _toshiba

re/current/voltage, etc.) are within the absolute maximum ratings. JEITA ? Please design the appropriate reliability upon reviewing the TOSHIBA 2-2N1A Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual Weight: 3 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm ? 25.4 mm ? 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta =

4.3. ssm6k24fe.pdf Size:153K _toshiba

he environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2004-06-02 0.2±0.05 0.5 0.5 1.6±0.05 1.0±0.05 0.12±0.05 0.55±0.05 SSM6K24FE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±?12 V, VDS = 0 ? ? ±1 µA V (BR) DSS ID = 1 mA,

4.4. ssm6k202fe.pdf Size:244K _toshiba

mA, VGS = –12 V 18 ? ? V Drain cutoff current IDSS VDS = 30 V, VGS = 0 ? ? 1 µA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 ? ? ±1 µA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.4 ? 1.0 V Forward transfer admittance ?Yfs? VDS = 3 V, ID = 1.5 A (Note2) 3.9 7.8 ? S ID = 1.5 A, VGS = 4.0 V (Note2) ? 66 85 Drain–source ON-resistance RDS (ON) m? ID = 1.0 A, VGS = 2.5 V (Note2) ? 78 101 ID = 0.5 A, VGS = 1.8 V (Note2) ? 95 145 Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz

4.5. ssm6k210fe_080204.pdf Size:202K _toshiba

etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2) Marking Equivalent Circuit (top view) 6 5 4 6 5 4 NP 1 2 3 1 2 3 1 2008-02-04 SSM6K210FE E

4.6. ssm6k211fe_081121.pdf Size:197K _toshiba

nditions (i.e. Weight: 3 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm ? 25.4 mm ? 1.6 mm, Cu Pad: 645 mm2) Marking Equivalent Circuit

4.7. ssm6k25fe.pdf Size:154K _toshiba

a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2004-06-02 0.2±0.05 0.5 0.5 1.6±0.05 1.0±0.05 0.12±0.05 0.55±0.05 SSM6K25FE Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±12V, VDS = 0 ?

4.8. ssm6k208fe_071113.pdf Size:189K _toshiba

g temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm ? 25.4 mm ? 1.6mm, Cu Pad: 645 mm2 ) 1 2007-11-13 SSM6K208FE Electrical Characteristics (Ta = 25°C) Charac

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