TK3P50D
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: TK3P50D
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 60
Maximale Drain-Source-Spannung (Uds): 500V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 3
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 3
Transistorgehäuse: DPAK
Ersatz (vergleichstyp) für TK3P50D
Transistor TK3P50D
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Drain-source voltage VDSS 500 V
Gate-source voltage VGSS ±30
Drain current (DC) (Note 1) ID 3 A
Drain current (pulsed) (Note 1) IDP 6
Power dissipation (Tc = 25?) PD 60 W
Single-pulse avalanche energy (Note 2) EAS 81 mJ
Avalanche current IAR 3 A
Repetitive avalanche energy (Note 3) EAR 6 mJ
Channel temperature Tch 150 ?
Storage temperature Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
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