TPC6109-H
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: TPC6109-H
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: P
Gesamt-Verlustleistung (Pd): 2.2
Maximale Drain-Source-Spannung (Uds): 30V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 5
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.059
Transistorgehäuse: SOT6/VS6
Ersatz (vergleichstyp) für TPC6109-H
Transistor TPC6109-H
- PDF-Dokument zum Download bereitstellen...
1.1. tpc6109-h_en_datasheet_100201.pdf  Size:260K _toshiba2  |
 | 1 g (typ.)
Avalanche current IAR -5 A
Repetitive avalanche energy
EAR 0.055 mJ
(Note 4)
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolu |
5.1. tpc6111.pdf Size:201K _toshiba2  |
 | continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) |
5.2. tpc6130_en_datasheet_110407.pdf Size:220K _toshiba2  |
 | fied)
a
Characteristics Symbol Rating Unit
Drain-source voltage VDSS -20 V
Gate-source voltage VGSS ±12
Drain current (DC) (Note 1) ID -2.8 A
Drain current (pulsed) (Note 1) IDP -11.2
Power dissipation (t = 5 s) (Note 2) PD 2.2 W
Power dissipation (t = 5 s) (Note 3) PD 0.7 W
Single-pulse avalanche energy (Note 4) EAS 10.1 mJ
Avalanche current IAR -2.8 A
Channel temperature Tch 150 ?
Storage temperature Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application |
5.3. tpc6113_en_datasheet_091226.pdf Size:211K _toshiba2  |
 | stg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“ |
5.4. tpc6110_en_datasheet_090717.pdf Size:230K _toshiba2  |
 | ange Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precaution |
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