TPC8088 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: TPC8088

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 1.9

Maximale Drain-Source-Spannung (Uds): 30V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 18

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.0024

Transistorgehäuse: SOP8

Ersatz (vergleichstyp) für TPC8088 Transistor

TPC8088 - PDF-Dokument zum Download bereitstellen...

1.1. tpc8088_en_datasheet_100714.pdf Size:220K _toshiba2

bol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 842 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage

4.1. tpc8086_en_datasheet_100716.pdf Size:227K _toshiba2

ess otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 17 A Drain current (pulsed) (Note 1) IDP 68 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 112 mJ Avalanche current IAR 17 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the ap

4.2. tpc8080_en_datasheet_100727.pdf Size:222K _toshiba2

bol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 842 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage

4.3. tpc8085_en_datasheet_100716.pdf Size:221K _toshiba2

ess otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 210 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the ap

4.4. tpc8084_en_datasheet_110310.pdf Size:238K _toshiba2

rwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 33 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 17 A Drain current (pulsed) (Note 1) IDP 68 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 65 mJ Avalanche current IAR 17 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application

4.5. tpc8082_en_datasheet_100730.pdf Size:224K _toshiba2

bol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 421 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage

4.6. tpc8087_en_datasheet_100726.pdf Size:220K _toshiba2

bol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 842 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage

4.7. tpc8081_en_datasheet_100729.pdf Size:222K _toshiba2

bol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 421 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage

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