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2SJ676
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2SJ676
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: P
Gesamt-Verlustleistung (Pd): 1.3
Maximale Drain-Source-Spannung (Uds): 200V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 2.5
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm:
Transistorgehäuse: TPS
Ersatz (vergleichstyp) für 2SJ676
Transistor 2SJ676
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5.1. 2sj673.pdf  Size:153K _nec  |
 | Notes 1. PW ? 10 µs, Duty Cycle ? 1%
2. Starting Tch = 25°C, VDD = -30 V, RG = 25 ?, VGS = 20 > 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17210EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K) |
Anderen MOSET... 2SJ509
, 2SJ512
, 2SJ516
, 2SJ525
, 2SJ618
, 2SJ619
, 2SJ620
, 2SJ669
, 3SK40
, 2SK1119
, 2SK1120
, 2SK1381
, 2SK1382
, 2SK1486
, 2SK1529
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, 2SK1544
.
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