2SK1930 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SK1930

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 80

Maximale Drain-Source-Spannung (Uds): 1000V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 4

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm:

Transistorgehäuse: TO220FL/SM

Ersatz (vergleichstyp) für 2SK1930 Transistor

2SK1930 - PDF-Dokument zum Download bereitstellen...

1.1. 2sk1930.pdf Size:381K _toshiba

(ch–a) 83.3 °C / W ambient Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ? JEITA ? TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2002-09-02 2SK1930 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V — — ±100 nA Drain cut-off current IDSS VDS = 800 V, VGS = 0

4.1. 2sk1934.pdf Size:82K _renesas

(BR)DSS 1000 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V ±30 — — V I = ±100 µA, V = 0 (BR)GSS G DS Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage drain current I — — 250 µA V = 800 V, V = 0 DSS DS GS Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V Static drain to source on state R — 1.2 1.6 ? I = 4 A, V = 10 V*3 DS(on) D GS resistance Forward transfer admittance |yfs| 4 6 — S ID = 4 A, VDS = 20 V*3 I

4.2. rej03g0984_2sk1933ds.pdf Size:96K _renesas

and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyr

4.3. 2sk1933.pdf Size:82K _renesas

DSS 900 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V Static drain to source on state RDS(on) — 0.9 1.2 ? ID = 5 A, VGS = 10 V*1 resistance Forward transfer admittance |yfs| 4.5 7 — S ID = 5 A, VDS = 20 V*1 Input capacitanc

4.4. 2sk1938.pdf Size:244K _fuji

c =25°C unless otherwise specified) Min. Typ. Max. Units Item Symbol Test Conditions Drain-source breakdown voltage V(BR)DSS ID=1mA VGS=0V 500 V Gate threshold voltage VGS(th) ID=1mA VDS=VGS 2.5 3.0 3.5 V Zero gate voltage drain current IDSS VDS=500V VGS=0V Tch=25°C 10 500 µA Tch=125°C 0.2 1.0 mA Gate-source leakage current IGSS 10 100 VGS=±30V VDS=0V nA Drain-source on-state resistance RDS(on) 0.25 0.35 ID=9A VGS=10V ? Forward transconductance gfs 9.0 18.0 ID=9A VDS=25V S Inpu

Anderen MOSET... 2SK1119 , 2SK1120 , 2SK1381 , 2SK1382 , 2SK1486 , 2SK1529 , 2SK1530 , 2SK1544 , IRL3803 , 2SK2013 , 2SK2162 , 2SK2173 , 2SK2200 , 2SK2201 , 2SK2229 , 2SK2231 , 2SK2232 .