Alle MOSFET. Datenblatt

 

2SK3569 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SK3569

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 45

Maximale Drain-Source-Spannung (Uds): 600

Maximale Gate-Source-Spannung (Ugs): 30

Maximaler Drainstrom (Id): 10

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr): 22

Drain-Kapazität (Cd), pF: 180

Ausgangswiderstand (Rds), Ohm: 0.75

Transistorgehäuse: TO220SIS

Ersatz (vergleichstyp) für 2SK3569 Transistor

2SK3569 PDF doc:

1.1. 2sk3569.pdf Size:236K _toshiba

2SK3569
2SK3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.1. 2sk3561.pdf Size:227K _toshiba

2SK3569
2SK3569

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C)

4.2. 2sk3562.pdf Size:232K _toshiba

2SK3569
2SK3569

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9? (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) C

4.3. 2sk3563.pdf Size:348K _toshiba

2SK3569
2SK3569

TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3563 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID =

4.4. 2sk3566_100506.pdf Size:214K _toshiba

2SK3569
2SK3569

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 ? (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

4.5. 2sk3565.pdf Size:341K _toshiba

2SK3569
2SK3569

TENTATIVE 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK3565 unit:mm Switching Regulator Applications 100.3 2.70.2 ?3.20.2 Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID =

4.6. 2sk3564.pdf Size:248K _toshiba

2SK3569
2SK3569

2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7? (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.7. 2sk3567.pdf Size:223K _toshiba

2SK3569
2SK3569

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.8. 2sk3568.pdf Size:245K _toshiba

2SK3569
2SK3569

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =

4.9. 2sk3560.pdf Size:76K _panasonic

2SK3569
2SK3569

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 4.60.2 10.50.3 1.40.1 For PDP/For high-speed switching Features Low on-resistance, low Qg 1.40.1 High avalanche resistance 2.50.2 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) Parameter Symbol Rating Unit (8.9) Drain-source surrender voltage VDSS 230 V 1 2 3 Gate-source surrender

Anderen MOSFET... 2SK3499 , 2SK3506 , 2SK3543 , 2SK3561 , 2SK3562 , 2SK3563 , 2SK3567 , 2SK3568 , IRF540N , 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 , 2SK3847 .

 


2SK3569
  2SK3569
  2SK3569
  2SK3569
 
2SK3569
  2SK3569
  2SK3569
  2SK3569
 

social 

Liste

Letztes Update

MOSFET IXFH50N50P3 | IXFQ50N50P3 | IXFT50N50P3 | IPF06N03LA | IPS06N03LA | IPU06N03LA | IPD06N03LA | 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H |

Zwischen 2 und 10 Zeichen (nur Zahlen und Buchstaben)