TPC8054-H MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: TPC8054-H

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 1.9

Maximale Drain-Source-Spannung (Uds): 100V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 10

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm:

Transistorgehäuse: SOP8(5.5_x_6.0)

Ersatz (vergleichstyp) für TPC8054-H Transistor

TPC8054-H - PDF-Dokument zum Download bereitstellen...

4.1. tpc8056-h_en_datasheet_100714.pdf Size:223K _toshiba2

ss otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 842 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature

4.2. tpc8051-h_en_datasheet_090619.pdf Size:206K _toshiba2

he energy EAS 110 mJ Circuit Configuration (Note 3) Avalanche current IAR 13 A 8 7 6 5 Repetitive avalanche energy EAR 0.06 mJ (Tc=25?) (Note 4) Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: For Notes 1 to 4, refer to the next page. 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability

4.3. tpc8059-h_en_datasheet_100803.pdf Size:226K _toshiba2

ess otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 421 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperatur

4.4. tpc8050-h_en_datasheet_090630.pdf Size:207K _toshiba2

che energy Circuit Configuration EAS 44 mJ (Note 3) 8 7 6 5 Avalanche current IAR 11 A Repetitive avalanche energy EAR 0.05 mJ (Tc = 25?) (Note 4) Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: For Notes 1 to 4, refer to the next page. 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability

4.5. tpc8057-h_en_datasheet_100721.pdf Size:225K _toshiba2

ss otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 842 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature

4.6. tpc8055-h_en_datasheet_100722.pdf Size:222K _toshiba2

ss otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 842 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature

4.7. tpc8058-h_en_datasheet_100729.pdf Size:224K _toshiba2

ss otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25? unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 72 Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 1.0 W Single-pulse avalanche energy (Note 4) EAS 421 mJ Avalanche current IAR 18 A Channel temperature Tch 150 ? Storage temperature

4.8. tpc8053-h.pdf Size:200K _toshiba2

he energy EAS 29 mJ Circuit Configuration (Note 3) Avalanche current IAR 9 A 8 7 6 5 Repetitive avalanche energy EAR 0.06 mJ (Tc=25?) (Note 4) Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: For Notes 1 to 4, refer to the next page. 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability s

4.9. tpc8052-h.pdf Size:212K _toshiba2

che energy EAS 67 mJ Circuit Configuration (Note 3) Avalanche current IAR 12 A 8 7 6 5 Repetitive avalanche energy EAR 0.08 mJ (Tc=25?) (Note 4) Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: For Notes 1 to 4, refer to the next page. 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability

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