2SJ105 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SJ105

Typ von Feldeffekttransistors: JFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds):

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 0.014

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm:

Transistorgehäuse: MINI

Ersatz (vergleichstyp) für 2SJ105 Transistor

2SJ105 - PDF-Dokument zum Download bereitstellen...

1.1. 2sj105.pdf Size:286K _toshiba

Gate-source cut-off voltage VGS (OFF) VDS = -10 V, ID = -0.1 µA 0.3 ? 6.0 V Forward transfer admittance ?Yfs? VDS = -10 V, VGS = 0, f = 1 kHz 1.0 4.0 ? mS VDS = -10 mV, VGS = 0 Drain-source ON resistance RDS (ON) ? 270 ? ? IDSS = -5 mA Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ? 18 ? pF Reverse transfer capacitance Crss VDG = -10 V, ID = 0, f = 1 MHz ? 3.6 ? pF Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA 1 2003-03-25 2SJ105 2 2003-0

5.1. 2sj109.pdf Size:242K _toshiba

5.2. 2sj108.pdf Size:339K _toshiba

0, IG = 100 µA 25 ? ? V IDSS Drain current VDS = -10 V, VGS = 0 -2.6 ? -20 mA (Note) Gate-source cut-off voltage VGS (OFF) VDS = -10 V, ID = -0.1 µA 0.15 ? 2.0 V Forward transfer admittance ?Yfs? VDS = -10 V, VGS = 0, f = 1 kHz 8 22 ? mS Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ? 105 ? pF Reverse transfer capacitance Crss VGD = 10 V, ID = 0, f = 1 MHz ? 32 ? pF VDS = -10 V, ID = -1 mA, RG = 1 k?, NF (1) ? 1.0 10 f = 10 Hz Noise figure dB VDS = -10 V, ID = -1 mA, RG

5.3. 2sj104.pdf Size:382K _toshiba

µA 0.2 ? 2.0 V VDS = -10 V, VGS = 0, f = 1 kHz Forward transfer admittance ?Yfs? 12 30 ? mS (Note 2) Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ? 105 ? pF Reverse transfer capacitance Crss VDG = -10 V, ID = 0, f = 1 MHz ? 32 ? pF Drain-source ON resistance RDS (ON) VDS = -10 mV, VGS = 0 (Note 2) ? 40 ? ? Note 1: IDSS classification GR: -2.6~-6.5 mA, BL: -6~-12 mA, V: -10~-20 mA Note 2: Condition of the typical value IDSS = -5 mA 1 2003-03-25 2SJ104 2 2003-03-25

5.4. 2sj106.pdf Size:283K _toshiba

= 0 -1.2 ? -14 mA (Note) Gate-source cut-off voltage VGS (OFF) VDS = -10 V, ID = -0.1 µA 0.3 ? 6.0 V Forward transfer admittance ?Yfs? VDS = -10 V, VGS = 0, f = 1 kHz 1.0 4.0 ? mS VDS = -10 mV, VGS = 0 Drain-source on resistance RDS (ON) ? 270 ? ? IDSS = -5 mA Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ? 18 ? pF Reverse transfer capacitance Crss VDG = -10 V, ID = 0, f = 1 MHz ? 3.6 ? pF Note: IDSS classification Y: -1.2~-3.0 mA, GR (G): -2.6~-6.5 mA, BL (L): -6~-14 mA

5.5. 2sj107.pdf Size:321K _toshiba

= -0.1 µA 0.2 ? 2.0 V VDS = -10 V, VGS = 0, f = 1 kHz Forward transfer admittance ?Yfs? 12 30 ? mS (Note 2) Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ? 105 ? pF Reverse transfer capacitance Crss VGD = 10 V, ID = 0, f = 1 MHz ? 32 ? pF Drain-source ON resistance RDS (ON) VDS = -10 mV, VGS = 0 (Note 2) ? 40 ? ? Note 1: IDSS classification GR: -2.6~-6.5 mA, BL: -6~-12 mA, V: -10~-20 mA Note 2: Condition of the typical value IDSS = -5 mA 1 2003-03-25 2SJ107 2 2003-03

5.6. 2sj103.pdf Size:282K _toshiba

e cut-off voltage VGS (OFF) VDS = -10 V, ID = -0.1 µA 0.3 ? 6.0 V Forward transfer admittance ?Yfs? VDS = -10 V, VGS = 0, f = 1 kHz 1.0 4.0 ? mS Drain-source ON resistance RDS (ON) VDS = -10 mV, VGS = 0, IDSS = -5 mA ? 270 ? ? Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ? 18 ? pF Reverse transfer capacitance Crss VDG = -10 V, ID = 0, f = 1 MHz ? 3.6 ? pF Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA 1 2003-03-25 2SJ103 2 2003-03-25 2SJ103

Anderen MOSET... SSM3K04FU , SSM3K04FV , SSM3K15TE , SSM3K16TE , SSM3K311T , SSM3K7002AF , SSM6J215FE , 2SJ103 , IRF250 , 2SJ106 , 2SJ144 , 2SK117 , 2SK118 , 2SK170 , 2SK184 , 2SK1875 , 2SK208 .