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2SJ549L
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2SJ549L
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: P
Gesamt-Verlustleistung (Pd): 50
Maximale Drain-Source-Spannung (Uds): 60V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 12
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.11
Transistorgehäuse: LDPAK(L)
Ersatz (vergleichstyp) für 2SJ549L
Transistor 2SJ549L
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1.1. rej03g0896_2sj549lsds.pdf  Size:110K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
4.1. 2sj549.pdf Size:97K _renesas  |
 | µs, duty cycle ? 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ? 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff voltage VG |
5.1. 2sj541.pdf Size:88K _renesas  |
 | 25°C, Rg ? 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR) DSS –60 — — V I = –10 mA, V = 0
D GS
Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0
(BR) GSS G DS
Zero gate voltage drain current I — — –10 µA V = –60 V, V = 0
DSS DS GS
Gate to source leak current I — — ±10 µA V = ±16 V, V = 0
GSS GS DS
Gate to source cutoff voltage V
GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V
D D |
5.2. rej03g0889_2sj542ds.pdf Size:101K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
5.3. 2sj546.pdf Size:88K _renesas  |
 | g ? 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR) DSS –60 — — V I = –10 mA, V = 0
D GS
Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0
(BR) GSS G DS
Zero gate voltage drain current I — — –10 µA V = –60 V, V = 0
DSS DS GS
Gate to source leak current I — — ±10 µA V = ±16 V, V = 0
GSS GS DS
Gate to source cutoff voltage V
GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V
D DS
Stat |
5.4. 2sj545.pdf Size:90K _renesas  |
 | 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state resistance RDS (on) — 0.11 0.15 ? ID = |
5.5. 2sj547.pdf Size:88K _renesas  |
 | cteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR) DSS –60 — — V I = –10 mA, V = 0
D GS
Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0
(BR) GSS G DS
Zero gate voltage drain current I — — –10 µA V = –60 V, V = 0
DSS DS GS
Gate to source leak current I — — ±10 µA V = ±16 V, V = 0
GSS GS DS
Gate to source cutoff voltage V
GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V
D DS
Static drain to source on state |
5.6. 2sj544.pdf Size:88K _renesas  |
 | 25°C, Rg ? 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR) DSS –60 — — V I = –10 mA, V = 0
D GS
Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0
(BR) GSS G DS
Zero gate voltage drain current I — — –10 µA V = –60 V, V = 0
DSS DS GS
Gate to source leak current I — — ±10 µA V = ±16 V, V = 0
GSS GS DS
Gate to source cutoff voltage V
GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V
D |
5.7. 2sj542.pdf Size:87K _renesas  |
 | 25°C, Rg ? 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR) DSS –60 — — V I = –10 mA, V = 0
D GS
Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0
(BR) GSS G DS
Zero gate voltage drain current I — — –10 µA V = –60 V, V = 0
DSS DS GS
Gate to source leak current I — — ±10 µA V = ±16 V, V = 0
GSS GS DS
Gate to source cutoff voltage V
GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V
D D |
5.8. rej03g0895_2sj548ds.pdf Size:102K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
5.9. rej03g0894_2sj547ds.pdf Size:102K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
5.10. rej03g0888_2sj541ds.pdf Size:101K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
5.11. 2sj543.pdf Size:88K _renesas  |
 | 25°C, Rg ? 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR) DSS –60 — — V I = –10 mA, V = 0
D GS
Gate to source breakdown voltage V ±20 — — V I = ±100 µA, V = 0
(BR) GSS G DS
Zero gate voltage drain current I — — –10 µA V = –60 V, V = 0
DSS DS GS
Gate to source leak current I — — ±10 µA V = ±16 V, V = 0
GSS GS DS
Gate to source cutoff voltage V
GS (off) –1.0 — –2.0 V I = –1 mA, V = –10 V
D D |
5.12. rej03g0890_2sj543ds.pdf Size:101K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
5.13. rej03g0887_2sj540ds.pdf Size:103K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
5.14. 2sj540.pdf Size:90K _renesas  |
 |
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state resistance RDS (on) — 0.11 0.15 |
5.15. rej03g0891_2sj544ds.pdf Size:101K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
Anderen MOSET... 2SJ527L
, 2SJ527S
, 2SJ528L
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, 2SJ529S
, 2SJ530L
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, 2SJ550L
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