| |
RJK0222DNS
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: RJK0222DNS
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd):
Maximale Drain-Source-Spannung (Uds): 25V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 14_16
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.0076
Transistorgehäuse: HWSON30468
Ersatz (vergleichstyp) für RJK0222DNS
Transistor RJK0222DNS
- PDF-Dokument zum Download bereitstellen...
1.1. r07ds0125ej_rjk0222dns.pdf  Size:63K _renesas  |
 | 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Notes: 1. PW ? 10 ?s, duty cycle ? 1%
2. Value at Tch = 25?C, Rg ? 50 ??
3. Tc = 25?C
R07DS0125EJ0030 Rev.0.30 Page 1 of 4
Sep 06, 2010
RJK0222DNS Preliminary
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 25 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 ?A VGS = ±20 V, VDS = 0
Zero gate voltage drai |
4.1. r07ds0259ej_rjk0225dns.pdf Size:143K _renesas  |
 | duty cycle ? 1%
2. Value at Tch = 25?C, Rg ? 50 ?
3. Tc = 25?C
R07DS0259EJ0110 Rev.1.10 Page 1 of 6
Mar 03, 2011
RJK0225DNS Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 25 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 ?A VGS = +16,-12 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 ?A VDS = 20 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2 |
4.2. r07ds0260ej_rjk0226dns.pdf Size:165K _renesas  |
 | otes: 1. PW ? 10 ?s, duty cycle ? 1%
2. Value at Tch = 25?C, Rg ? 50 ?
3. Tc = 25?C
R07DS0260EJ0110 Rev.1.10 Page 1 of 6
Mar 03, 2011
RJK0226DNS Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 25 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 ?A VGS = ±12 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 mA VDS = 25 V, VGS = 0
Gate to source cutoff voltage |
4.3. r07ds0126ej_rjk0223dns.pdf Size:75K _renesas  |
 | 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Notes: 1. PW ? 10 ?s, duty cycle ? 1%
2. Value at Tch = 25?C, Rg ? 50 ??
3. Tc = 25?C
R07DS0126EJ0030 Rev.0.30 Page 1 of 4
Sep 02, 2010
RJK0223DNS Preliminary
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 25 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 ?A VGS = ±20 V, VDS = 0
Zero gate voltage dra |
Anderen MOSET... RJK0208DPA
, RJK0210DPA
, RJK0211DPA
, RJK0212DPA
, RJK0213DPA
, RJK0214DPA
, RJK0215DPA
, RJK0216DPA
, IRF540
, RJK0223DNS
, RJK0225DNS
, RJK0226DNS
, RJK0230DPA
, RJK0301DPB
, RJK0301DPC
, RJK0302DPB
, RJK0302DPC
.
|
