RJK1021DPN MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: RJK1021DPN

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 100

Maximale Drain-Source-Spannung (Uds): 100V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 70

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.016

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für RJK1021DPN Transistor

RJK1021DPN - PDF-Dokument zum Download bereitstellen...

1.1. rej03g1630_rjk1021dpeds.pdf Size:121K _renesas

and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyr

1.2. rej03g1628_rjk1021dpnds.pdf Size:120K _renesas

and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyr

4.1. r07ds0196ej_rjk1028dpa.pdf Size:107K _renesas

tes: 1. PW ? 10 ?s, duty cycle ? 1% 2. Value at Tch = 25°C, Rg ? 50 ? 3. Tc = 25°C R07DS0196EJ0200 Rev.2.00 Page 1 of 6 Apr 11, 2011 RJK1028DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ± 0.1 ?A VGS = +12, -5 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 ?A VDS = 100 V, VGS = 0 Gate to source cutoff

4.2. r07ds0197ej_rjk1028dsp.pdf Size:85K _renesas

+150 ?C Notes: 1. PW ? 10 ?s, duty cycle ? 1% 2. Value at Tch = 25?C, Rg ? 50 ? 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ? 10s R07DS0197EJ0200 Rev.2.00 Page 1 of 6 Nov 08, 2010 RJK1028DSP Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ± 0.1 ?A VGS = +12, -5 V, VDS = 0 Zero gate voltage drain

4.3. r07ds0195ej_rjk1028dns.pdf Size:92K _renesas

otes: 1. PW ? 10 ?s, duty cycle ? 1% 2. Value at Tch = 25?C, Rg ? 50 ? 3. Tc = 25?C R07DS0195EJ0200 Rev.2.00 Page 1 of 6 Nov 08, 2010 RJK1028DNS Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ± 0.1 ?A VGS = +12, -5 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 ?A VDS = 100 V, VGS = 0 Gate to source cutoff

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