Alle MOSFET. IRF2807 Datenblatt

 

IRF2807 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRF2807

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 200 W

Maximale Drain-Source-Spannung (Vds): 75 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Maximaler Drainstrom (Id): 82 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 0.013 Ohm

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für IRF2807 Transistor

IRF2807 PDF doc:

1.1. irf2807.pdf Size:207K _international_rectifier

IRF2807
IRF2807

PD - 91517 IRF2807 HEXFET Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

1.2. irf2807s.pdf Size:124K _international_rectifier

IRF2807
IRF2807

PD - 94170 IRF2807S IRF2807L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

1.3. irf2807z.pdf Size:173K _international_rectifier

IRF2807
IRF2807

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

Anderen MOSFET... IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , BF245C , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L .

 


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