IRF5305 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRF5305

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 110

Maximale Drain-Source-Spannung (Uds): 55V

Maximale Gate-Source-Spannung (Ugs): 10

Maximaler Drainstrom (Id): 31

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.06

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für IRF5305 Transistor

IRF5305 - PDF-Dokument zum Download bereitstellen...

1.1. irf5305.pdf Size:124K _international_rectifier

rrent, VGS @ -10V -31 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A IDM Pulsed Drain Current -110 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 280 mJ IAR Avalanche Current -16 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm

1.2. irf5305s.pdf Size:171K _international_rectifier

connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A IDM Pulsed Drain Current -110 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Sourc

4.1. irf530.rev1.1.pdf Size:166K _motorola

G S CASE 221A–09 TO-220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 100 Vdc Drain–to–Gate Voltage (RGS = 1.0 M?) VDGR 100 Vdc Gate–to–Source Voltage — Continuous VGS ±20 Vdc Gate–to–Source Voltage — Single Pulse (tp ? 50 mS) VGSM ±25 Vdc Drain Current — Continuous ID 14 Adc Drain Current — Continuous @ 100°C ID 10 Drain Current — Single Pulse (tp ? 10 mS) IDM 49 Apk Total Power Dissipation @ TC = 25°C PD 78 Watts Derate

4.2. irf530_mot.pdf Size:173K _motorola

e G S CASE 221A–09 TO-220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 100 Vdc Drain–to–Gate Voltage (RGS = 1.0 M?) VDGR 100 Vdc Gate–to–Source Voltage — Continuous VGS ±20 Vdc Gate–to–Source Voltage — Single Pulse (tp ? 50 mS) VGSM ±25 Vdc Drain Current — Continuous ID 14 Adc Drain Current — Continuous @ 100°C ID 10 Drain Current — Single Pulse (tp ? 10 mS) IDM 49 Apk Total Power Dissipation @ TC = 25°C PD 78 Watts Der

4.3. irf530n_1.pdf Size:98K _philips

VGS = 10 V - 17 A Tmb = 100 ?C; VGS = 10 V - 12 A IDM Pulsed drain current Tmb = 25 ?C - 68 A PD Total power dissipation Tmb = 25 ?C - 79 W Tj, Tstg Operating junction and - 55 175 ?C storage temperature AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT EAS Non-repetitive avalanche Unclamped inductive load, IAS = 7.8 A; - 150 mJ energy tp = 300 µs; Tj prior to avalanche = 25?C; VDD ? 25

4.4. irf530fp.pdf Size:77K _st

V o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C (•) Pulse width limited by safe operating area 1/5 March 1998 IRF530FP THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 4.28 C/W o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o Rthc-sink Thermal Resistance Case-sink Typ 0.5 C/W o Tl Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Cu

4.5. irf530.pdf Size:53K _st

Tc = 25 C90 40 W Derating Factor 0.6 0.27 W/oC Viso Insulation Withstand Voltage (DC) - 2000 V o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j (•) Pulse width limited by safe operating area (1) ISD ?11 ?, di/dt ? 200 A/µs, VDD ? V(BR)DSS, Tj ? TJMAX 1/6 March 1998 IRF530/IRF530FI THERMAL DATA TO-220 TO220-FI o R Thermal Resistance Junction-case Max 1 3.75 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj- amb o

4.6. irf530a.pdf Size:254K _fairchild_semi

e ? C Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R ?JC Junction-to-Case -- 2.74 ? R ?CS C Case-to-Sink 0.5 -- /W R ?JA Junction-to-Ambient -- 62.5 Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL IRF530A POWER MOSFET ? Electrical Characteristics (TC=25 C unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition µA BVDSS Drain-Source Breakdo

4.7. irf530.pdf Size:180K _fairchild_semi

4.8. irf530pbf.pdf Size:2177K _international_rectifier

.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information I I I I I I I I I N?te: "P" in assembly line position indicates "Lead-Free" = I Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, Ca

4.9. irf530n.pdf Size:212K _international_rectifier

ontinuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 60 PD @TC = 25°C Power Dissipation 70 W Linear Derating Factor 0.47 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 7.0 mJ dv/dt Peak Diode Recovery dv/dt 7.4 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6

4.10. irf530ns.pdf Size:178K _international_rectifier

and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 60 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pu

4.11. irf530s.pdf Size:180K _international_rectifier

4.12. irf530.pdf Size:175K _international_rectifier

4.13. irf530spbf.pdf Size:1851K _international_rectifier

ipple ? 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS Document Number: 91020 www.vishay.com 7 IRF530SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL AS SEMBLED ON WW 02, 2000 RECTIFIER F530S LOGO IN T HE ASS EMBLY LINE "L" DAT E CODE Note: "P" in assembly line YEAR 0 = 2000 ASS EMBLY position indicates "Lead-Free" WEEK

4.14. irf530a.pdf Size:944K _samsung

for Soldering TL 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R JC ? Junction-to-Case -- 2.74 ? R CS Case-to-Sink 0.5 -- ? /W R JA Junction-to-Ambient -- 62.5 ? N-CHANNEL POWER MOSFET ? Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS VGS=0V,ID=250 µA Drain-Source Breakdown Voltage 100 -- -- V ? ? BV/ ?TJ µA ID=250 See Fig 7 Breakdo

4.15. irf530s_sihf530s.pdf Size:171K _vishay

s low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF530S-GE3 SiHF530STRL-GE3a SiHF530STRR-GE3a IRF530SPbF IRF530STRLPbFa IRF530STRRPbFa Lead (Pb)-free SiHF530S-E3 SiHF530STL-E3a SiHF530STR-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Sour

4.16. irf530_sihf530.pdf Size:201K _vishay

IRF530 SnPb SiHF530 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 TC = 25 °C 14 Continuous Drain Current VGS at 10 V ID TC = 100 °C 10 A Pulsed Drain Currenta IDM 56 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energyb EAS 69 mJ Repetitive Avalanche Currenta IAR 14 A Repetitive Avalanche Energya EAR 8.8 mJ Maximum Power Dissipation TC = 25 °C PD 88 W Peak Dio

Anderen MOSET... IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF630 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 .