2N7081 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N7081

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 18

Maximale Drain-Source-Spannung (Uds): 100V

Maximale Gate-Source-Spannung (Ugs): 20

Maximaler Drainstrom (Id): 12

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF: 600

Ausgangswiderstand (Rds), Ohm: 0.15

Transistorgehäuse: TO257

Ersatz (vergleichstyp) für 2N7081 Transistor

2N7081 - PDF-Dokument zum Download bereitstellen...

1.1. 2n7081.pdf Size:14K _semelab

lab.co.uk 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 12.07 (0.500) 10.41 (0.410) 19.05 (0.750) 10.92 (0.430) 2N7081–220M–ISO ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 250µA 100 V Gate Threshold Voltage VDS = VGS ID = 250µA 24 V VGS(th) Gate – Body Leakage VDS = 0 VGS = ±20V ±100 nA VDS = 80V 25 IDSS µA Zero Gate Voltage D

5.1. 2n708.pdf Size:285K _rca

5.2. 2n7086.pdf Size:14K _semelab

ales@semelab.co.uk Prelim. 1/99 Website http://www.semelab.co.uk 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 12.07 (0.500) 10.41 (0.410) 19.05 (0.750) 10.92 (0.430) 2N7086 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BV(BR)DSS Drain–Source Breakdown Voltage VGS = 0 ID = 250µA 200 V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 24 V IGSS Gate – Body Leakage VDS = 0 VGS = ±2

5.3. 2n7085.pdf Size:16K _semelab

552612. Prelim. 7/99 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 12.07 (0.500) 10.41 (0.410) 19.05 (0.750) 10.92 (0.430) 2N7085 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS V(BR)DSS Drain–Source Breakdown Voltage VGS = 0 ID = 250µA 100 V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 24 V IGSS Gate – Body Leakag

Anderen MOSET... 2N7073 , 2N7074 , 2N7075 , 2N7076 , 2N7077 , 2N7078 , 2N7079 , 2N7080 , IRF5210 , 2N7082 , 2N7085 , 2N7086 , 2N7100 , 2N7101 , 2N7102 , 2N7103 , 2N7104 .