IRF7401 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRF7401

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 2.5

Maximale Drain-Source-Spannung (Uds): 20V

Maximale Gate-Source-Spannung (Ugs): 4.5

Maximaler Drainstrom (Id): 8.7

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.022

Transistorgehäuse: SO8

Ersatz (vergleichstyp) für IRF7401 Transistor

IRF7401 - PDF-Dokument zum Download bereitstellen...

1.1. irf7401.pdf Size:118K _international_rectifier

designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 4.5V 10 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 8.7 A ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.0 IDM Pulsed Drain Current 35 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-S

4.1. irf740s.pdf Size:93K _st

rrent (continuous) at T = 100 C6.3 A D c IDM(•) Drain Current (pulsed) 40 A o Ptot Total Dissipation at Tc = 25 C125 W Derating Factor 1.0 W/oC dv/dt(1) Peak Diode Recovery voltage slope 4.0 V/ns o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C (•) Pulse width limited by safe operating area (1) ISD ?10 A, di/dt ?120 ?/µs, VDD ? V(BR)DSS, Tj ?TJMAX 1/8 August 1998 IRF740S THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.0 C/W

4.2. irf740.pdf Size:93K _st

40 A o Ptot Total Dissipation at Tc = 25 C125 W Derating Factor 1.0 W/oC dv/dt(1) Peak Diode Recovery voltage slope 4.0 V/ns o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j (•) Pulse width limited by safe operating area ( 1) ISD ?10 A, di/dt ?120 ?/µs, VDD ? V(BR)DSS, Tj ? TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet 1/8 October 1998 IRF740 THERMAL DATA o Rthj-case Thermal Resistance Ju

4.3. irf740.pdf Size:154K _fairchild_semi

4.4. irf740b.pdf Size:894K _fairchild_semi

C = 100°C) 6.3 6.3 * A IDM (Note 1) 40 40 * A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 450 mJ Single Pulsed Avalanche Energy IAR (Note 1) 10 A Avalanche Current EAR (Note 1) 13.4 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 134 44 W - Derate above 25°C 1.08 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, TL

4.5. irf740a.pdf Size:196K _international_rectifier

(1.1N•m) Typical SMPS Topologies: l Single transistor Flyback Xfmr. Reset l Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) Notes through … are on page 8 11/10/03 Document Number: 91051 www.vishay.com 1 IRF740APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.48 ––– V/°C Reference

4.6. irf7406.pdf Size:114K _international_rectifier

e package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -10V -6.7 ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -5.8 A ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.7 IDM Pulsed Drain Current -23 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°

4.7. irf7402.pdf Size:136K _international_rectifier

d board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.8 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.4 A IDM Pulsed Drain Current 54 PD @TA = 25°C Power Dissipation 2.5 W PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C VGS Gate-t

4.8. irf7404.pdf Size:163K _international_rectifier

designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -4.5V -7.7 ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -6.7 A ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -5.4 IDM Pulsed Drain Current -27 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gat

4.9. irf740lcpbf.pdf Size:1404K _international_rectifier

.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IR F1010 LOT CODE 1789 PART NU MB E R AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL IN THE ASSEMBLY LINE "C"

4.10. irf740s.pdf Size:171K _international_rectifier

4.11. irf740spbf.pdf Size:951K _international_rectifier

(.421) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 27.40 (1.079) 12.80 (.504) 23.90 (.941) 4 330.00 60.00 (2.362) (14.173) MIN. MAX. 30.40 (1.197) NOTES : MAX. 1. COMFORMS TO EIA-418. 26.40 (1.039) 4 2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961) 3. DIMENSION MEASURED @ HUB. 3 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9024

4.12. irf740as-l.pdf Size:304K _international_rectifier

e ) Typical SMPS Topologies: l Single transistor Flyback Xfmr. Reset l Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) Notes through … are on page 10 Document Number: 91052 www.vishay.com 1 IRF740AS/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.48 ––– V/°C Reference to 25°C, ID

4.13. irf740lc.pdf Size:174K _international_rectifier

4.14. irf7403.pdf Size:116K _international_rectifier

age is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 9.7 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 8.5 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.4 IDM Pulsed Drain Current 34 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to

4.15. irf740as.pdf Size:135K _international_rectifier

Single transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) Notes through are on page 10 www.irf.com 1 9/14/99 IRF740AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.48 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance –––

4.16. irf740.pdf Size:926K _international_rectifier

0.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IR F 1010 L OT CODE 1789 PART NUMBER AS S E MB LE D ON WW 19, 1997 INT E R NAT IONAL IN T HE AS S EMBLY LINE "C" RE CT IF IE R LOGO Note: "P" in assembly line DAT E CODE posit

4.17. irf740a.pdf Size:937K _samsung

ses, 1/8 ” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R ? Junction-to-Case -- 0.93 JC o R ? Case-to-Sink 0.5 -- /W CS C R ? Junction-to-Ambient -- 62.5 JA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 oC unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS VGS=0V,ID=250 µA Drain-Source Breakdown Voltage 400 -- -- V o BV/ TJ ? ? ID=250 µA See Fig 7 Breakdown Voltage Temp. Co

4.18. irf740lc_sihf740lc.pdf Size:197K _vishay

These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs ofter the designer a new standard in power transistors for switching applications. ORDERING INFORMATION Package TO-220AB IRF740LCPbF Lead (Pb)-free SiHF740LC-E3 IRF740LC SnPb SiHF740LC ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ± 30 TC = 25 °C 10 Continuous D

4.19. irf740_sihf740.pdf Size:196K _vishay

AXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ± 20 TC = 25 °C 10 Continuous Drain Current VGS at 10 V ID TC = 100 °C 6.3 A Pulsed Drain Currenta IDM 40 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 520 mJ Repetitive Avalanche Currenta IAR 10 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns

4.20. irf740a_sihf740a.pdf Size:205K _vishay

Gate-Source Voltage VGS ± 30 TC = 25 °C 10 Continuous Drain Current VGS at 10 V ID TC = 100 °C 6.3 A Pulsed Drain Currenta IDM 40 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 630 mJ Repetitive Avalanche Currenta IAR 10 A Repetitive Avalanche Energya EAR 12.5 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak

4.21. irf740.pdf Size:246K _inchange_semiconductor

Transistor IRF740 ·ELECTRICAL CHARACTERISTICS (TC=25?) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 400 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5A 0.55 ? IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 10A; VGS= 0 2.2 V isc Website:www.iscsemi.cn

4.22. hirf740.pdf Size:48K _hsmc

er Value Units VDSS Drain-Source Voltage 400 V Drain to Current (Continuous)(VGS@10V, TC=25oC) 10 A ID Drain to Current (Continuous)(VGS@10V, TC=100oC) 6.3 A IDM Drain to Current (Pulsed)*1 40 A VGS Gate-to-Source Voltage (Continue) ±20 V Total Power Dissipation TO-220AB 74 W TO-220FP 38 PD Derate above 25°C TO-220AB 0.59 W/°C TO-220FP 0.3 EAS Single Pulse Avalanche Energy*2 520 mJ IAR Avalanche Current*1 10 A EAR Repetitive Avalanche Energy*1 13 mJ dv/dt Peak Diode Recovery*

Anderen MOSET... IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF740 , IRFZ48N , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS , IRF740FI , IRF740S .