IRF840 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRF840

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 125

Maximale Drain-Source-Spannung (Uds): 500V

Maximale Gate-Source-Spannung (Ugs): 20

Maximaler Drainstrom (Id): 8

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF: 1500

Ausgangswiderstand (Rds), Ohm: 0.85

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für IRF840 Transistor

IRF840 - PDF-Dokument zum Download bereitstellen...

1.1. irf840_1.pdf Size:60K _philips

VGS Gate-source voltage - ± 30 V ID Continuous drain current Tmb = 25 ?C; VGS = 10 V - 8.5 A Tmb = 100 ?C; VGS = 10 V - 5.4 A IDM Pulsed drain current Tmb = 25 ?C - 34 A PD Total dissipation Tmb = 25 ?C - 147 W Tj, Tstg Operating junction and - 55 150 ?C storage temperature range AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT EAS Non-repetitive avalanche Unclamped inductive load, IAS

1.2. irf840.pdf Size:360K _st

(continuous) at TC = 100°C 5.1 A IDM ( ) Drain Current (pulsed) 32 A PTOT Total Dissipation at TC = 25°C 125 W Derating Factor 1.0 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ?8A, di/dt ?50A/µs, VDD ? V(BR)DSS, Tj ? TJMAX. (•)Pulse width limited by safe operating area June 2003 1/8 NEW DATASHEET ACCORDING TO PCN_DSG_2C14 - MARKING: IRF840@ Obsolete Product(s) - Obsolete Product(s)

1.3. irf840f.pdf Size:188K _st

tion at Tc = 25 C 125 40 W Derating Factor 1 0.32 W/oC VISO Insulation Withstand Voltage (DC) ? 2000 o T Storage Temperature -65 to 150 C st g o Tj Max. Operating Junction Temperature 150 C (•) Pulse width limited by safe operating area May 1993 1/10 IRF840/FI - IRF841/FI THERMAL DATA TO-220 ISOWATT220 o R Thermal Resistance Junction-case Max 1 3.12 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o R Thermal Resistance Case-sink Typ 0.5 C/W th c-s

1.4. irf840a.pdf Size:99K _st

ion at Tc = 25 C 125 40 W Derating Factor 1 0.32 W/oC VISO Insulation Withstand Voltage (DC) ? 2000 o T Storage Temperature -65 to 150 C st g o Tj Max. Operating Junction Temperature 150 C (•) Pulse width limited by safe operating area May 1993 1/10 IRF840/FI - IRF841/FI THERMAL DATA TO-220 ISOWATT220 o R Thermal Resistance Junction-case Max 1 3.12 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o R Thermal Resistance Case-sink Typ 0.5 C/W th c-s

1.5. irf840,841(th).pdf Size:188K _st

tion at Tc = 25 C 125 40 W Derating Factor 1 0.32 W/oC VISO Insulation Withstand Voltage (DC) ? 2000 o T Storage Temperature -65 to 150 C st g o Tj Max. Operating Junction Temperature 150 C (•) Pulse width limited by safe operating area May 1993 1/10 IRF840/FI - IRF841/FI THERMAL DATA TO-220 ISOWATT220 o R Thermal Resistance Junction-case Max 1 3.12 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o R Thermal Resistance Case-sink Typ 0.5 C/W th c-s

1.6. irf840b.pdf Size:911K _fairchild_semi

8.0 8.0 A - Continuous (TC = 100°C) 5.1 5.1 A IDM (Note 1) 32 32 A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 320 mJ Single Pulsed Avalanche Energy IAR (Note 1) 8.0 A Avalanche Current EAR (Note 1) 13.4 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns PD Power Dissipation (TC = 25°C) 134 44 W - Derate above 25°C 1.08 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for s

1.7. irf840lc.pdf Size:194K _international_rectifier

1.8. irf840spbf.pdf Size:666K _international_rectifier

NAL) LOT CODE YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E COD E Document Number: 91071 www.vishay.com 8 IRF840SPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 11.60 (.457) 1.85 (.073) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136)

1.9. irf840lcspbf_irf840lclpbf.pdf Size:458K _international_rectifier

CODE YE AR 0 = 2000 WE EK 02 A = ASSEMBLY SITE CODE Document Number: 91068 www.vishay.com 8 IRF840LCS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 PART NUMBER INT ERNATIONAL AS S EMBL ED ON WW 19, 1997 RECT IFIER IN THE AS S EMBLY LINE "C" LOGO DAT E CODE Note: "P" in as sembly line YEAR 7 = 1997 pos ition indicates "Lead-Free" ASSEMBLY WEEK 19 LOT CODE LINE C OR PAR

1.10. irf840s.pdf Size:172K _international_rectifier

1.11. irf840lcpbf.pdf Size:986K _international_rectifier

.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 PART NU MB E R AS S E MB L E D ON WW 19, 1997 INT E RNAT IONAL IN THE ASSEMBLY LINE "C"

1.12. irf840.pdf Size:170K _international_rectifier

1.13. irf840as.pdf Size:129K _international_rectifier

ical SMPS Topologies Two Transistor Forward Haft Bridge Full Bridge Notes through are on page 10 www.irf.com 1 12/16/99 IRF840AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.85 ? VGS = 10V, ID = 4.8A VGS(t

1.14. irf840aspbf_irf840alpbf.pdf Size:673K _international_rectifier

.6mm from case ) Typical SMPS Topologies Two Transistor Forward Haft Bridge Full Bridge Notes through are on page 10 04/21/04 Document Number: 91066 www.vishay.com 1 IRF840AS/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source

1.15. irf840a.pdf Size:199K _international_rectifier

n (1.1N•m) Typical SMPS Topologies: l Two Transistor Forward l Haft Bridge l Full Bridge 11/11/03 Document Number: 91065 www.vishay.com 1 IRF840APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient ––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.85 ? VGS = 10V, I

1.16. irf840pbf.pdf Size:1086K _international_rectifier

1.15 (.045) 0.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 PART NUMB E R AS S E MB L E D ON WW 19, 1997 INT E RNAT IONAL IN THE ASSEMBLY LINE "C" RE CT IF IE R LOGO Note: "P" in assembly line DAT E CO

1.17. irf840lcs.pdf Size:173K _international_rectifier

signer a new power transistor standard for switching applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A IDM Pulsed Drain Current 28 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy‚ 510 mJ IAR Avalanche Current 8.0 A EAR Repetitive Avalan

1.18. irf840a.pdf Size:941K _samsung

s, 1/8 ” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R ? Junction-to-Case -- 0.93 JC o R ? Case-to-Sink 0.5 -- /W CS C R ? Junction-to-Ambient -- 62.5 JA N-CHANNEL POWER MOSFET Electrical Characteristics (TA=25 oC unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS µ VGS=0V,ID=250 A Drain-Source Breakdown Voltage 60 -- -- V o ?BV/ ?TJ µA C ID=250 See Fig 7 Breakdown Voltage Temp. Coeff.

1.19. irf840l_sihf840l.pdf Size:161K _vishay

TO-262) Lead (Pb)-free and Halogen-free SiHF840L-GE3 IRF840LPbF Lead (Pb)-free SiHF840L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 V TC = 25 °C 8.0 Continuous Drain Current VGS at 10 V ID TC = 100 °C 5.1 A Pulsed Drain Currenta IDM 32 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 510 mJ Repetitive Avalanche Currenta IAR 8.0 A Repetitive Avalanche E

1.20. irf840lc_sihf840lc.pdf Size:197K _vishay

ovements combined with the proven N-Channel MOSFET ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications. ORDERING INFORMATION Package TO-220AB IRF840LCPbF Lead (Pb)-free SiHF840LC-E3 IRF840LC SnPb SiHF840LC ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 8.0 Continuous

1.21. irf840a_sihf840a.pdf Size:206K _vishay

Drain Current VGS at 10 V ID TC = 100 °C 5.1 A Pulsed Drain Currenta IDM 32 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 510 mJ Repetitive Avalanche Currenta IAR 8.0 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque

1.22. irf840_sihf840.pdf Size:195K _vishay

MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 V TC = 25 °C 8.0 Continuous Drain Current VGS at 10 V ID TC = 100 °C 5.1 A Pulsed Drain Currenta IDM 32 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 510 mJ Repetitive Avalanche Currenta IAR 8.0 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 3.5 V

1.23. irf840.pdf Size:141K _inchange_semiconductor

isc N-Channel Mosfet Transistor IRF840 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 V Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V VGS(th) Drain-Source On-Resistance VGS= 10V; ID= 4A 0.85 ? RDS(on) IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS=0 250 nA VSD Forward On-Voltage IS= 8A; VGS=0 2.

Anderen MOSET... IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , SSS7N60A , IRF840A , IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 .